| 11661673 |
HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown thereby |
Alexander Syrkin, Alexander Usikov, Vladimir A. Dmitriev |
2023-05-30 |
| 11322652 |
Methods for producing composite GaN nanocolumns and light emitting structures made from the methods |
Anna Volkova, Alexander Syrkin, Benjamin A. Haskell, Hussein S. El-Ghoroury |
2022-05-03 |
| 9577143 |
Backflow reactor liner for protection of growth surfaces and for balancing flow in the growth liner |
Lisa Shapovalov, Oleg Kovalenkov, Alexander Syrkin |
2017-02-21 |
| 9443727 |
Semi-polar III-nitride films and materials and method for making the same |
Vitali Soukhoveev, Benjamin A. Haskell, Hussein S. El-Ghoroury, Alexander Syrkin |
2016-09-13 |
| 9416464 |
Apparatus and methods for controlling gas flows in a HVPE reactor |
Vladimir A. Dmitriev, Oleg Kovalenkov, Lisa Shapovalov, Alexander Syrkin, Anna Volkova +3 more |
2016-08-16 |
| 9023673 |
Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions |
Lisa Shapovalov, Oleg Kovalenkov, Vitali Soukhoveev, Alexander Syrkin, Alexander Usikov |
2015-05-05 |
| 8728938 |
Method for substrate pretreatment to achieve high-quality III-nitride epitaxy |
Anna Volkova, Lisa Shapovalov, Alexander Syrkin, Philippe Spiberg, Hussein S. El-Ghoroury |
2014-05-20 |
| 8673074 |
Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) |
Alexander Usikov, Alexander Syrkin, Robert G. W. Brown, Hussein S. El-Ghoroury, Philippe Spiberg +2 more |
2014-03-18 |
| 8647435 |
HVPE apparatus and methods for growth of p-type single crystal group III nitride materials |
Vladimir A. Dmitriev, Oleg Kovalenkov, Lisa Shapovalov, Alexander Syrkin, Anna Volkova +3 more |
2014-02-11 |
| 8372199 |
Bulk GaN and AlGaN single crystals |
Yuri V. Melnik, Vitali Soukhoveev, Katie Tsvetkov, Vladimir A. Dmitriev |
2013-02-12 |
| 8092596 |
Bulk GaN and AlGaN single crystals |
Yuri V. Melnik, Vitali Soukhoveev, Katie Tsvetkov, Vladimir A. Dmitriev |
2012-01-10 |
| 7727333 |
HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby |
Alexander Syrkin, Alexander Usikov, Oleg Kovalenkov, Vladimir A. Dmitriev |
2010-06-01 |
| 7611586 |
Reactor for extended duration growth of gallium containing single crystals |
Yuri V. Melnik, Vitali Soukhoveev, Kaite Tsvetkov, Vladimir A. Dmitriev |
2009-11-03 |
| 7556688 |
Method for achieving low defect density AlGaN single crystal boules |
Yuri V. Melnik, Vitali Soukhoveev, Katie Tsvetkov, Vladimir A. Dmitriev |
2009-07-07 |
| 7279047 |
Reactor for extended duration growth of gallium containing single crystals |
Yuri V. Melnik, Vitali Soukhoveev, Katie Tsvetkov, Vladimir A. Dmitriev |
2007-10-09 |
| 6936357 |
Bulk GaN and ALGaN single crystals |
Yuri V. Melnik, Vitali Soukhoveev, Katie Tsvetkov, Vladimir A. Dmitriev |
2005-08-30 |
| 6656285 |
Reactor for extended duration growth of gallium containing single crystals |
Yuri V. Melnik, Vitali Soukhoveev, Katie Tsvetkov, Vladimir A. Dmitriev |
2003-12-02 |
| 6616757 |
Method for achieving low defect density GaN single crystal boules |
Yuri V. Melnik, Vitali Soukhoveev, Katie Tsvetkov, Vladimir A. Dmitriev |
2003-09-09 |
| 6613143 |
Method for fabricating bulk GaN single crystals |
Yuri V. Melnik, Vitali Soukhoveev, Katie Tsvetkov, Vladimir A. Dmitriev |
2003-09-02 |
| 6576054 |
Method for fabricating bulk AlGaN single crystals |
Yuri V. Melnik, Vitali Soukhoveev, Katie Tsvetkov, Vladimir A. Dmitriev |
2003-06-10 |
| 5679153 |
Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures |
Vladimir A. Dmitriev, Svetlana V. Rendakova, Calvin H. Carter, Jr. |
1997-10-21 |