Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11813341 | Dental product with enhanced toughness | Yuta TAJIMA, Kiyoko Ban | 2023-11-14 |
| 11472729 | Silicate glass and dental product | Kazuhiro Yamada, Kiyoko Ban | 2022-10-18 |
| 7855384 | SIC semiconductor device and method for manufacturing the same | Tsuyoshi Yamamoto, Hiroki Nakamura, Toshiyuki Morishita, Takasumi Ooyanagi, Atsuo Watanabe | 2010-12-21 |
| 7763893 | Silicon carbide semiconductor device | Eiichi Okuno | 2010-07-27 |
| 7663181 | Semiconductor device | Takasumi Ohyanagi, Atsuo Watanabe, Tsuyoshi Yamamoto, Hiroki Nakamura | 2010-02-16 |
| 7470930 | Silicon carbide semiconductor device | Eiichi Okuno | 2008-12-30 |
| 7307313 | Semiconductor device including a vertical field effect transistor, having trenches, and a diode | Takasumi Ohyanagi, Atsuo Watanabe, Tsuyoshi Yamamoto, Hiroki Nakamura, Rajesh Kumar Malhan | 2007-12-11 |
| 6831331 | Power MOS transistor for absorbing surge current | Yasuhiro Kitamura, Kenji Kohno, Shoji Mizuno, Yoshiaki Nakayama, Hiroshi Maeda +5 more | 2004-12-14 |
| 6809034 | Method of etching metallic thin film on thin film resistor | Ichiro Ito, Satoshi Shiraki, Tomio Yamamoto, Makoto Ohkawa, Atsumi Takahashi +3 more | 2004-10-26 |
| 6770564 | Method of etching metallic thin film on thin film resistor | Ichiro Ito, Satoshi Shiraki, Tomio Yamamoto, Makoto Ohkawa, Atsumi Takahashi +3 more | 2004-08-03 |
| 6696323 | Method of manufacturing semiconductor device having trench filled up with gate electrode | Hitoshi Yamaguchi, Jun Sakakibara, Takumi Shibata, Toshiyuki Morishita | 2004-02-24 |
| 6525375 | Semiconductor device having trench filled up with gate electrode | Hitoshi Yamaguchi, Jun Sakakibara, Takumi Shibata, Toshiyuki Morishita | 2003-02-25 |
| 6495294 | Method for manufacturing semiconductor substrate having an epitaxial film in the trench | Shoichi Yamauchi, Yasushi Urakami, Kunihiro Onoda, Yoshinori Otsuka | 2002-12-17 |
| 6406982 | Method of improving epitaxially-filled trench by smoothing trench prior to filling | Yasushi Urakami, Shoichi Yamauchi, Hitoshi Yamaguchi, Nobuhiro Tsuji | 2002-06-18 |
| 6336245 | Door stopper | — | 2002-01-08 |
| 6150697 | Semiconductor apparatus having high withstand voltage | Akihiko Teshigahara, Akiyoshi Asai, Kunihiro Onoda, Hiroyasu Itou, Ryuichirou Abe | 2000-11-21 |
| 6104078 | Design for a semiconductor device having elements isolated by insulating regions | Makio Iida, Mitsuhiro Saitou, Akitaka Murata, Hiroyuki Ban, Tadashi Suzuki +2 more | 2000-08-15 |
| 5644157 | High withstand voltage type semiconductor device having an isolation region | Makio Iida, Shoji Miura, Takayuki Sugisaka, Osamu Ishihara | 1997-07-01 |
| 5599722 | SOI semiconductor device and method of producing same wherein warpage is reduced in the semiconductor device | Takayuki Sugisaka, Shoji Miura | 1997-02-04 |
| 5592015 | Dielectric isolated type semiconductor device provided with bipolar element | Makio Iida, Tadashi Shibata, Takayuki Sugisaka, Shoji Miura | 1997-01-07 |
| 5557134 | Dielectric isolated type semiconductor device | Takayuki Sugisaka, Shoji Miura, Makio Iida | 1996-09-17 |
| 5480832 | Method for fabrication of semiconductor device | Shoji Miura, Takayuki Sugisaka, Atsushi Komura | 1996-01-02 |
| 5449946 | Semiconductor device provided with isolation region | Makio Iida, Takayuki Sugisaka, Shoji Miura | 1995-09-12 |
| 5072277 | Semiconductor device with gradually varying doping levels to compensate for thickness variations | Masami Yamaoka | 1991-12-10 |
| 5017505 | Method of making a nonvolatile semiconductor memory apparatus with a floating gate | Tetsuo Fujii, Nobuyoshi Sakakibara | 1991-05-21 |