Akiyoshi Asai — 11 Patents at Nippondenso Co.

Akiyoshi Asai has been granted 11 US patents while listed as an inventor at Nippondenso Co.. The first was granted in 1994 and the most recent in June 2018. Akiyoshi Asai ranks #435,149 of 4,157,543 US inventors in our database (top 10.5%). Patent records list Akiyoshi Asai in Kariya, MH, JP.

Patents per Year

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Showing 1–11 of 11 patents

Patent #	Title	Co-Inventors	Date
10002841	Semiconductor device	Shotaro Miyawaki, Naohiko Hirano, Yasutomi Asai	2018-06-19
6191007	Method for manufacturing a semiconductor substrate	Masaki Matsui, Shoichi Yamauchi, Hisayoshi Ohshima, Kunihiro Onoda, Takanari Sasaya +2 more	2001-02-20
6150697	Semiconductor apparatus having high withstand voltage	Akihiko Teshigahara, Kunihiro Onoda, Hiroyasu Itou, Ryuichirou Abe, Toshio Sakakibara	2000-11-21
5869872	Semiconductor integrated circuit device and manufacturing method for the same	Jun Sakakibara, Megumi Suzuki, Seiji Fujino	1999-02-09
5786616	Semiconductor integrated circuit having an SOI structure, provided with a protective circuit	Harutsugu Fukumoto, Hiroaki Tanaka	1998-07-28
5751041	Semiconductor integrated circuit device	Megumi Suzuki, Jun Sakakibara	1998-05-12
5736770	Semiconductor device with conductive connecting layer and abutting insulator section made of oxide of same material	Nobuyuki Ohya, Mitsutaka Katada	1998-04-07
5663588	Semiconductor device having an SOI structure of mesa isolation type and manufacturing method therefor	Megumi Suzuki, Kazuhiro Tsuruta	1997-09-02
5610426	Semiconductor integrated circuit device having excellent dual polarity overvoltage protection characteristics	Kazuhiro Tsuruta, Takeshi Enya	1997-03-11
5488243	SOI MOSFET with floating gate	Kazuhiro Tsuruta, Hiroaki Himi, Seiji Fujino	1996-01-30
5279981	Method of reducing the trap density of an oxide film for application to fabricating a nonvolatile memory cell	Shigemitsu Fukatsu	1994-01-18