Issued Patents All Time
Showing 25 most recent of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12315770 | Edge encapsulation for high voltage devices | David Hoag, Luis Baez, Margaret Mary Barter, James Joseph Brogle | 2025-05-27 |
| 12266523 | Parasitic capacitance reduction in GaN-on-silicon devices | Gabriel R. Cueva, Wayne Mack Struble | 2025-04-01 |
| 12112983 | Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device | Wayne Mack Struble, Gabriel R. Cueva | 2024-10-08 |
| 12080708 | Monolithic multi-I region diode limiters | James Joseph Brogle, Joseph Gerard Bukowski, Margaret Mary Barter | 2024-09-03 |
| 12074225 | PIN diodes with multi-thickness intrinsic regions | James Joseph Brogle, Joseph Gerard Bukowski, Margaret Mary Barter | 2024-08-27 |
| 12021038 | Solderable and wire bondable part marking | Margaret Mary Barter | 2024-06-25 |
| 12015051 | Semiconductor device and method of forming monolithic surge protection resistor | James Joseph Brogle | 2024-06-18 |
| 11990343 | Gate metal formation on gallium nitride or aluminum gallium nitride | Wayne Mack Struble, Jason Barrett, John Stephen Atherton | 2024-05-21 |
| 11978808 | Vertical etch heterolithic integrated circuit devices | James Joseph Brogle, Margaret Mary Barter, David Hoag, Michael G. Abbott | 2024-05-07 |
| 11942518 | Reduced interfacial area III-nitride material semiconductor structures | Wayne Mack Struble | 2024-03-26 |
| 11929364 | Parasitic capacitance reduction in GaN devices | Gabriel R. Cueva, Wayne Mack Struble | 2024-03-12 |
| 11923462 | Lateral Schottky diode | Douglas Carlson, Anthony Kaleta | 2024-03-05 |
| 11817450 | Heterolithic integrated circuits including integrated devices formed on semiconductor materials of different elemental composition | Wayne Mack Struble | 2023-11-14 |
| 11705448 | Monolithic multi-I region diode limiters | James Joseph Brogle, Joseph Gerard Bukowski, Margaret Mary Barter | 2023-07-18 |
| 11676860 | Barrier for preventing eutectic break-through in through-substrate vias | Allen W. Hanson, Rajesh Baskaran | 2023-06-13 |
| 11640960 | Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor | Wayne Mack Struble | 2023-05-02 |
| 11600614 | Microwave integrated circuits including gallium-nitride devices on silicon | Douglas Carlson, Wayne Mack Struble | 2023-03-07 |
| 11574906 | Monolithic multi-I region diode switches | James Joseph Brogle, Joseph Gerard Bukowski, Margaret Mary Barter | 2023-02-07 |
| 11342469 | Vertical etch heterolithic integrated circuit devices | James Joseph Brogle, Margaret Mary Barter, David Hoag, Michael G. Abbott | 2022-05-24 |
| 11270928 | Unibody lateral via | Andrzej Rozbicki, Belinda Simone Edmee Piernas, David Hoag, James Joseph Brogle | 2022-03-08 |
| 11233047 | Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon | Wayne Mack Struble | 2022-01-25 |
| 11158575 | Parasitic capacitance reduction in GaN-on-silicon devices | Gabriel R. Cueva, Wayne Mack Struble | 2021-10-26 |
| 11127737 | Monolithic multi-I region diode limiters | James Joseph Brogle, Joseph Gerard Bukowski, Margaret Mary Barter | 2021-09-21 |
| 11056483 | Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor | Wayne Mack Struble | 2021-07-06 |
| 11038023 | III-nitride material semiconductor structures on conductive silicon substrates | Wayne Mack Struble | 2021-06-15 |