TM

Takuji Matsumoto

FI Fujifilm Business Innovation: 39 patents #375 of 1,659Top 25%
RT Renesas Technology: 29 patents #25 of 3,337Top 1%
SO Sony: 25 patents #1,512 of 25,231Top 6%
Mitsubishi Electric: 14 patents #1,823 of 25,717Top 8%
DC Daiichi Pure Chemicals Co.: 2 patents #23 of 117Top 20%
SE Seiko Epson: 1 patents #5,551 of 7,774Top 75%
SC Sekisui Medical Co.: 1 patents #93 of 206Top 50%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
MC Mitsui Chemicals: 1 patents #1,270 of 2,279Top 60%
RE Renesas Electronics: 1 patents #2,739 of 4,529Top 65%
Overall (All Time): #11,049 of 4,157,543Top 1%
114
Patents All Time

Issued Patents All Time

Showing 101–114 of 114 patents

Patent #TitleCo-InventorsDate
6713804 TFT with a negative substrate bias that decreases in time Yuuichi Hirano, Yasuo Yamaguchi 2004-03-30
6646306 Semiconductor device Toshiaki Iwamatsu, Takashi Ipposhi, Hideki Naruoka, Nobuyoshi Hattori, Shigeto Maegawa +1 more 2003-11-11
6627512 Method of manufacturing a semiconductor device Toshiaki Iwamatsu, Takashi Ipposhi 2003-09-30
6611041 Inductor with patterned ground shield Shigenobu Maeda, Yasuo Yamaguchi, Yuuichi Hirano, Takashi Ipposhi 2003-08-26
6608345 Nonvolatile semiconductor memory device and semiconductor integrated circuit Tatsuya Kunikiyo 2003-08-19
6495898 Semiconductor device and method of manufacturing the same Toshiaki Iwamatsu, Takashi Ipposhi 2002-12-17
6486513 Semiconductor device Shigenobu Maeda 2002-11-26
6455894 Semiconductor device, method of manufacturing the same and method of arranging dummy region Toshiaki Iwamatsu, Yuuichi Hirano 2002-09-24
6452249 Inductor with patterned ground shield Shigenobu Maeda, Yasuo Yamaguchi, Yuuichi Hirano, Takashi Ipposhi 2002-09-17
6384241 Purified salt of &bgr;-hydroxyethoxy acetic acid, purified 2-p-dioxanone, and manufacturing method therefor Satoru Nakatani, Yoshinori Nakahara, Hideyuki Akieda, Takeshi Ishitoku 2002-05-07
6314021 Nonvolatile semiconductor memory device and semiconductor integrated circuit Shigenobu Maeda, Tatsuya Kunikiyo 2001-11-06
6249026 MOS Transistor with a buried oxide film containing fluorine Takashi Ipposhi, Yasuo Yamaguchi 2001-06-19
6035169 Developing device Koji Miyake, Hideaki Tanaka 2000-03-07
4599834 Seismic isolator Shigeru Fujimoto, Satoshi Ohte, Hirofumi Kondo, Takafumi Fujita 1986-07-15