Issued Patents All Time
Showing 1–25 of 70 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7175706 | Process of producing multicrystalline silicon substrate and solar cell | Masaki Mizutani, Katsumi Nakagawa, Hiroshi Sato, Takehito Yoshino, Shoji Nishida +3 more | 2007-02-13 |
| 6951585 | Liquid-phase growth method and liquid-phase growth apparatus | Katsumi Nakagawa, Hiroshi Sato, Shoji Nishida, Yasuyoshi Takai | 2005-10-04 |
| 6653554 | Thin film polycrystalline solar cells and methods of forming same | — | 2003-11-25 |
| 5956602 | Deposition of polycrystal Si film | — | 1999-09-21 |
| 5910342 | Process for forming deposition film | Masaaki Hirooka, Kyosuke Ogawa, Isamu Shimizu | 1999-06-08 |
| 5795396 | Apparatus for forming crystalline film | Jun-Ichi Hanna | 1998-08-18 |
| 5667597 | Polycrystalline silicon semiconductor having an amorphous silicon buffer layer | — | 1997-09-16 |
| 5645947 | Silicon-containing deposited film | Masaaki Hirooka, Kyosuke Ogawa, Isamu Shimizu | 1997-07-08 |
| 5644145 | Process for the formation of an amorphous silicon deposited film with intermittent irradiation of inert gas plasma | — | 1997-07-01 |
| 5476694 | Method for forming deposited film by separately introducing an active species and a silicon compound into a film-forming chamber | Masaaki Hirooka, Shigeru Ohno | 1995-12-19 |
| 5470389 | Apparatus for forming deposited film | Junichi Hanna, Isamu Shimizu, Masaaki Hirooka | 1995-11-28 |
| 5322568 | Apparatus for forming deposited film | Jun-Ichi Hanna, Isamu Shimizu, Masaaki Hirooka | 1994-06-21 |
| 5288658 | Process for the formation of an amorphous silicon deposited film with intermittent irradiation of inert gas plasma | — | 1994-02-22 |
| 5246886 | Process for depositing a silicon-containing polycrystalline film on a substrate by way of growing Ge-crystalline nucleus | Akira Sakai, Isamu Shimizu | 1993-09-21 |
| 5244698 | Process for forming deposited film | Shigeru Ohno, Masahiro Kanai, Shunri Oda, Isamu Shimizu | 1993-09-14 |
| 5213997 | Method for forming crystalline film employing localized heating of the substrate | Jun-Ichi Hanna | 1993-05-25 |
| 5178904 | Process for forming deposited film from a group II through group VI metal hydrocarbon compound | Shigeru Ohno, Masahiro Kanai, Shunri Oda, Isamu Shimizu | 1993-01-12 |
| 5160543 | Device for forming a deposited film | Masaaki Hirooka, Jun-Ichi Hanna, Isamu Shimizu | 1992-11-03 |
| 5154135 | Apparatus for forming a deposited film | — | 1992-10-13 |
| 5126169 | Process for forming a deposited film from two mutually reactive active species | Hisanori Tsuda, Masahiro Kanai, Masafumi Sano | 1992-06-30 |
| 5028488 | Functional ZnSe.sub.1-x Te.sub.x :H deposited film | Katsumi Nakagawa, Masahiro Kanai, Tsutomu Murakami, Kozo Arao, Yasushi Fujioka | 1991-07-02 |
| 5019887 | Non-single crystalline photosensor with hydrogen and halogen | Mitsuyuki Niwa, Takayoshi Arai, Isamu Shimizu, Eiji Takeuchi, Tsutomu Murakami | 1991-05-28 |
| 5008726 | PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Masahiro Kanai, Tsutomu Murakami, Kozo Arao, Yasushi Fujioka +1 more | 1991-04-16 |
| 4959106 | Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Masahiro Kanai, Kozo Arao, Yasushi Fujioka, Akira Sakai +1 more | 1990-09-25 |
| 4926229 | Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material | Katsumi Nakagawa, Masahiro Kanai, Kozo Arao, Yasushi Fujioka, Akira Sakai | 1990-05-15 |