RS

Ronald K. Sampson

SS Stmicroelectronics Sa: 15 patents #75 of 1,676Top 5%
SS Stmicroelectronics (Crolles 2) Sas: 2 patents #204 of 529Top 40%
DU Duke University: 1 patents #1,064 of 2,315Top 50%
Overall (All Time): #294,635 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
11205621 Device and method for alignment of vertically stacked wafers and die John H. Zhang, Walter Kleemeier, Paul Ferreira 2021-12-21
10615125 Device and method for alignment of vertically stacked wafers and die John H. Zhang, Walter Kleemeier, Paul Ferreira 2020-04-07
10199392 FinFET device having a partially dielectric isolated fin structure Nicolas Loubet 2019-02-05
9870999 Device and method for alignment of vertically stacked wafers and die John H. Zhang, Walter Kleemeier, Paul Ferreira 2018-01-16
9601381 Method for the formation of a finFET device with epitaxially grown source-drain regions having a reduced leakage path Nicolas Loubet, Stephane Monfray 2017-03-21
9601382 Method for the formation of a FinFET device with epitaxially grown source-drain regions having a reduced leakage path Stephane Monfray, Nicolas Loubet 2017-03-21
9385051 Method for the formation of a FinFET device having partially dielectric isolated fin structure Nicolas Loubet 2016-07-05
9324660 Device and method for alignment of vertically stacked wafers and die John H. Zhang, Walter Kleemeier, Paul Ferreira 2016-04-26
9136384 Method for the formation of a FinFET device having partially dielectric isolated Fin structure Nicolas Loubet 2015-09-15
8569899 Device and method for alignment of vertically stacked wafers and die John H. Zhang, Walter Kleemeier, Paul Ferreira 2013-10-29
8560111 Method of determining pressure to apply to wafers during a CMP John H. Zhang, Walter Kleemeier 2013-10-15
8476765 Copper interconnect structure having a graphene cap John H. Zhang, Cindy Goldberg, Walter Kleemeier 2013-07-02
6424137 Use of acoustic spectral analysis for monitoring/control of CMP processes — 2002-07-23
6087709 Method of forming an integrated circuit having spacer after shallow trench fill and integrated circuit formed thereby Todd H. Gandy, Robert Louis Hodges 2000-07-11
6022788 Method of forming an integrated circuit having spacer after shallow trench fill and integrated circuit formed thereby Todd H. Gandy, Robert Louis Hodges 2000-02-08
5313044 Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor Hisham Z. Massoud 1994-05-17