Issued Patents All Time
Showing 1–25 of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9567850 | System of monitoring rotational time of rotatable equipment | Jonathan Ryan Prill | 2017-02-14 |
| 8940577 | Programmable metallization cells and methods of forming the same | Venkatram Venkatasamy, Ming Sun | 2015-01-27 |
| 8766230 | Non-volatile multi-bit memory with programmable capacitance | Xuguang Wang, Shuiyuan Huang, Dimitar V. Dimitrov, Song S. Xue | 2014-07-01 |
| 8711608 | Memory with separate read and write paths | Haiwen Xi, Hongyue Liu, Antoine Khoueir, Song S. Xue | 2014-04-29 |
| 8476721 | Magnet-assisted transistor devices | Yang Li, Insik Jin, Harry Hongyue Liu, Song S. Xue, Shuiyuan Huang | 2013-07-02 |
| 8466525 | Static magnetic field assisted resistive sense element | Yuankai Zheng, Xiaohua Lou, Haiwen Xi | 2013-06-18 |
| 8466524 | Static magnetic field assisted resistive sense element | Yuankai Zheng, Xiaohua Lou, Haiwen Xi | 2013-06-18 |
| 8456903 | Magnetic memory with porous non-conductive current confinement layer | Ming Sun, Dimitar V. Dimitrov, Patrick J. Ryan | 2013-06-04 |
| 8422278 | Memory with separate read and write paths | Haiwen Xi, Hongyue Liu, Antoine Khoueir, Song S. Xue | 2013-04-16 |
| 8400823 | Memory with separate read and write paths | Haiwen Xi, Hongyue Liu, Antoine Khoueir, Song S. Xue | 2013-03-19 |
| 8399908 | Programmable metallization memory cells via selective channel forming | Haiwen Xi, Ming Sun, Dexin Wang, Shuiyuan Huang, Song S. Xue | 2013-03-19 |
| 8343801 | Method of forming a programmable metallization memory cell | Ming Sun, Insik Jin, Venkatram Venkatasamy, Philip G. Pitcher, Nurul Amin | 2013-01-01 |
| 8334165 | Programmable metallization memory cells via selective channel forming | Haiwen Xi, Ming Sun, Dexin Wang, Shuiyuan Huang, Song S. Xue | 2012-12-18 |
| 8293571 | Programmable metallization cells and methods of forming the same | Venkatram Venkatasamy, Ming Sun | 2012-10-23 |
| 8288753 | Programmable resistive memory cell with oxide layer | Ming Sun, Insik Jin, Venkatram Venkatasamy, Philip G. Pitcher, Nurul Amin | 2012-10-16 |
| 8203865 | Non-volatile memory cell with non-ohmic selection layer | Wei Tian, Insik Jin, Venugopalan Vaithyanathan, Haiwen Xi, Brian Lee | 2012-06-19 |
| 8197953 | Magnetic stack design | Haiwen Xi, Antoine Khoueir, Brian Lee, Pat J. Ryan, Insik Jin +1 more | 2012-06-12 |
| 8183654 | Static magnetic field assisted resistive sense element | Yuankai Zheng, Xiaohua Lou, Haiwen Xi | 2012-05-22 |
| 8097902 | Programmable metallization memory cells via selective channel forming | Haiwen Xi, Ming Sun, Dexin Wang, Shuiyuan Huang, Song S. Xue | 2012-01-17 |
| 8058646 | Programmable resistive memory cell with oxide layer | Ming Sun, Insik Jin, Venkatram Venkatasamy, Philip G. Pitcher, Nurul Amin | 2011-11-15 |
| 8004875 | Current magnitude compensation for memory cells in a data storage array | Markus Jan Peter Siegert, Andrew John Carter, Alan Xuguang Wang | 2011-08-23 |
| 7999337 | Static magnetic field assisted resistive sense element | Yuankai Zheng, Xiaohua Lou, Haiwen Xi | 2011-08-16 |
| 7977722 | Non-volatile memory with programmable capacitance | Xuguang Wang, Shuiyuan Huang, Dimitar V. Dimitrov, Song S. Xue | 2011-07-12 |
| 7969771 | Semiconductor device with thermally coupled phase change layers | Haiwen Xi, Yuankai Zheng, Patrick J. Ryan | 2011-06-28 |
| 7948045 | Magnet-assisted transistor devices | Yang Li, Insik Jin, Harry Hongyue Liu, Song S. Xue, Shuiyuan Huang | 2011-05-24 |