Issued Patents All Time
Showing 1–25 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12258678 | Gallium nitride single crystal substrate | Takashi Sato, Tetsuji Fujimoto, Toshio Kitamura | 2025-03-25 |
| 11718927 | Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or more | Takehiro Yoshida, Seiji Sarayama, Takashi Sato, Naoya Miyoshi, Akishige Murakami | 2023-08-08 |
| 10998188 | Gallium nitride laminated substrate and semiconductor device | Tomoyoshi Mishima, Hiroshi Ohta, Fumimasa Horikiri | 2021-05-04 |
| 10978296 | Nitride semiconductor substrate, semiconductor laminate, laminated structure, method for manufacturing nitride semiconductor substrate and method for manufacturing semiconductor laminate | Takehiro Yoshida, Hajime Fujikura, Fumimasa Horikiri | 2021-04-13 |
| 10584031 | Nitride crystal substrate | Takehiro Yoshida | 2020-03-10 |
| 10309036 | Method for manufacturing group-III nitride semiconductor crystal substrate | Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Takehiro Yoshida | 2019-06-04 |
| 10290489 | Method for manufacturing group-III nitride substrate and group-III nitride substrate | Toshio Kitamura, Takehiro Yoshida | 2019-05-14 |
| 10266965 | Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal | Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masashi ISEMURA, Akira Usui +1 more | 2019-04-23 |
| 10260165 | Method for manufacturing nitride crystal substrate and substrate for crystal growth | Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masayuki Imanishi, Takehiro Yoshida | 2019-04-16 |
| 10253432 | Semiconductor substrate manufacturing method | Takehiro Yoshida, Toshio Kitamura, Yukio Abe | 2019-04-09 |
| 10100434 | Nitride semiconductor single crystal substrate manufacturing method | Takehiro Yoshida, Takayuki Suzuki, Yukio Abe | 2018-10-16 |
| 8207054 | Group III nitride semiconductor substrate, substrate for group III nitride semiconductor device, and methods of making same | — | 2012-06-26 |
| 8101939 | GaN single-crystal substrate and method for producing GaN single crystal | Yuichi Oshima | 2012-01-24 |
| 7981713 | Group III-V nitride-based semiconductor substrate, group III-V nitride-based device and method of fabricating the same | — | 2011-07-19 |
| 7935615 | III-V nitride semiconductor substrate and its production method | — | 2011-05-03 |
| 7847313 | Group III-V nitride-based semiconductor substrate and group III-V nitride-based light emitting device | — | 2010-12-07 |
| 7829913 | Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method | Yuichi Oshima, Takeshi Eri, Akira Usui, Haruo Sunagawa | 2010-11-09 |
| 7790489 | III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer | — | 2010-09-07 |
| 7674699 | III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof | — | 2010-03-09 |
| 7622791 | III-V group nitride system semiconductor substrate | — | 2009-11-24 |
| 7435608 | III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer | — | 2008-10-14 |
| 7288830 | III-V nitride semiconductor substrate and its production method | — | 2007-10-30 |
| 7276779 | III-V group nitride system semiconductor substrate | — | 2007-10-02 |
| 7271404 | Group III-V nitride-based semiconductor substrate and method of making same | Yuichi Oshima | 2007-09-18 |
| 7253499 | III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer | — | 2007-08-07 |