Issued Patents All Time
Showing 25 most recent of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12322594 | Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer | Keith Doran Weeks, Nyles Wynn Cody, Hideki Takeuchi | 2025-06-03 |
| 12315723 | Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms | Keith Doran Weeks, Nyles Wynn Cody | 2025-05-27 |
| 12199148 | Semiconductor device including superlattice with O18 enriched monolayers | Nyles Wynn Cody, Keith Doran Weeks | 2025-01-14 |
| 12191160 | Method for making a semiconductor superlattices with different non-semiconductor thermal stabilities | Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears | 2025-01-07 |
| 12142641 | Method for making gate-all-around (GAA) device including a superlattice | Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears, Robert John Stephenson, Hideki Takeuchi | 2024-11-12 |
| 12119380 | Method for making semiconductor device including superlattice with oxygen and carbon monolayers | Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears, Robert John Stephenson, Hideki Takeuchi | 2024-10-15 |
| 12046470 | Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer | Keith Doran Weeks, Nyles Wynn Cody, Hideki Takeuchi | 2024-07-23 |
| 11978771 | Gate-all-around (GAA) device including a superlattice | Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears, Robert John Stephenson, Hideki Takeuchi | 2024-05-07 |
| 11923418 | Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer | Keith Doran Weeks, Nyles Wynn Cody, Hideki Takeuchi | 2024-03-05 |
| 11848356 | Method for making semiconductor device including superlattice with oxygen and carbon monolayers | Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears, Robert John Stephenson, Hideki Takeuchi | 2023-12-19 |
| 11837634 | Semiconductor device including superlattice with oxygen and carbon monolayers | Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears, Robert John Stephenson, Hideki Takeuchi | 2023-12-05 |
| 11810784 | Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer | Keith Doran Weeks, Nyles Wynn Cody, Hideki Takeuchi | 2023-11-07 |
| 11728385 | Semiconductor device including superlattice with O18 enriched monolayers | Nyles Wynn Cody, Keith Doran Weeks | 2023-08-15 |
| 11721546 | Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms | Keith Doran Weeks, Nyles Wynn Cody | 2023-08-08 |
| 11682712 | Method for making semiconductor device including superlattice with O18 enriched monolayers | Nyles Wynn Cody, Keith Doran Weeks | 2023-06-20 |
| 11631584 | Method for making semiconductor device with selective etching of superlattice to define etch stop layer | Keith Doran Weeks, Nyles Wynn Cody | 2023-04-18 |
| 11430869 | Method for making superlattice structures with reduced defect densities | Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears, Robert John Stephenson | 2022-08-30 |
| 11183565 | Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods | Richard Burton, Robert J. Mears | 2021-11-23 |
| 10937868 | Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices | Richard Burton, Robert J. Mears | 2021-03-02 |
| 10937888 | Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices | Richard Burton, Robert J. Mears | 2021-03-02 |
| 10879357 | Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice | Richard Burton, Robert J. Mears | 2020-12-29 |
| 10868120 | Method for making a varactor with hyper-abrupt junction region including a superlattice | Richard Burton, Robert J. Mears | 2020-12-15 |
| 10854717 | Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance | Hideki Takeuchi, Daniel J. Connelly, Richard Burton, Robert J. Mears | 2020-12-01 |
| 10847618 | Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance | Hideki Takeuchi, Daniel J. Connelly, Richard Burton, Robert J. Mears | 2020-11-24 |
| 10840337 | Method for making a FINFET having reduced contact resistance | Hideki Takeuchi, Daniel J. Connelly, Richard Burton, Robert J. Mears | 2020-11-17 |