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Methods of fabricating field effect transistors having protruded active regions |
Ji-Young Lee |
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Method of fabricating semiconductor device |
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Methods of forming patterns in semiconductor devices |
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2012-07-10 |
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Method of fabricating semiconductor device |
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Methods of fabricating field effect transistors having protruded active regions |
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Method of manufacturing semiconductor device having buried gate |
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Field effect transistors having protruded active regions and methods of fabricating such transistors |
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2010-02-02 |
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Thin layer structure and method of forming the same |
Jae-Kyu Ha, Min-Chul Chae, Yong-Sun Ko, Young Mi Lee, Jae-Seung Hwang |
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Method of manufacturing integrated circuit device including recessed channel transistor |
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Method of forming fine patterns using double patterning process |
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Method of fabricating semiconductor device having contact hole with high aspect-ratio |
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Method of manufacturing integrated circuit device including recessed channel transistor |
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Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same |
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Method for forming a self-aligned contact hole in a semiconductor device |
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Method of manufacturing a semiconductor device with a self-aligned contact |
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Semiconductor device with a self-aligned contact and a method of manufacturing the same |
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Capacitor and method for fabricating the same |
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2000-08-01 |