Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10896917 | Semiconductor device | Min-Sung Song, Heung-Jin Joo, Kwan Yong Kim, Jin-Woo Park, He-jueng Lee +1 more | 2021-01-19 |
| 10529736 | Semiconductor device | Min-Sung Song, Heung-Jin Joo, Kwan Yong Kim, Jin-Woo Park, He-jueng Lee +1 more | 2020-01-07 |
| 8765572 | Method of fabricating semiconductor device | Yong-Lack Choi, Chang-Hyun Cho, Seung-Pil Chung, Hyun Seok Jang, Jung-Dal Choi | 2014-07-01 |
| 7696570 | Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the same | Hyeoung-Won Seo, Sang Hyun Lee | 2010-04-13 |
| 7534708 | Recessed-type field effect transistor with reduced body effect | Dong Hyun Kim, Sang Hyun Lee, Hyeoung-Won Seo, Dae-Joong Won | 2009-05-19 |
| 7524733 | Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same | Hyeoung-Won Seo, Nak-Jin Son, Jun Seo | 2009-04-28 |
| 7491603 | Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the same | Hyeoung-Won Seo, Sang Hyun Lee | 2009-02-17 |
| 7429505 | Method of fabricating fin field effect transistor using isotropic etching technique | Hyeoung-Won Seo, Woun-Suck Yang, Jae-Man Yoon | 2008-09-30 |
| 7402871 | Semiconductor device having resistor and method of fabricating the same | — | 2008-07-22 |
| 7393769 | Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the same | Hyeoung-Won Seo, Ki-Nam Kim, Woun-Suck Yang | 2008-07-01 |
| 7378320 | Method of forming asymmetric MOS transistor with a channel stopping region and a trench-type gate | Hyeoung-Won Seo, Dong Hyun Kim, Sang Hyun Lee | 2008-05-27 |
| 7354827 | Transistor having asymmetric channel region, semiconductor device including the same, and method of fabricating semiconductor device including the same | Hyeoung-Won Seo, Sun-joon Kim, Jin Woo Lee | 2008-04-08 |
| 7323746 | Recess gate-type semiconductor device and method of manufacturing the same | Won-Mo Park, Jae-Choel Paik, Dong Hyun Kim, Chang-Sub Lee | 2008-01-29 |
| 7300845 | Method of manufacturing recess type MOS transistor having a dual diode impurity layer structure | Hyeoung-Won Seo, Dae-Joong Won, Sang Hyun Lee | 2007-11-27 |
| 7279774 | Bulk substrates in FinFETs with trench insulation surrounding FIN pairs having FINs separated by recess hole shallower than trench | Hyeoung-Won Seo, Woun-Suck Yang, Jae-Man Youn | 2007-10-09 |
| 7221023 | Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same | Hyeoung-Won Seo, Nak-Jin Son, Jun Seo | 2007-05-22 |
| 7205208 | Method of manufacturing a semiconductor device | Dong Hyun Kim | 2007-04-17 |
| 7153733 | Method of fabricating fin field effect transistor using isotropic etching technique | Hyeoung-Won Seo, Woun-Suck Yang, Jae-Man Yoon | 2006-12-26 |
| 7034368 | Semiconductor memory device and fabrication method thereof using damascene gate and epitaxial growth | — | 2006-04-25 |
| 6861313 | Semiconductor memory device and fabrication method thereof using damascene bitline process | — | 2005-03-01 |
| 6844233 | Semiconductor memory device and fabrication method thereof using damascene gate and epitaxial growth | — | 2005-01-18 |
| 6191049 | Method for forming oxide film in semiconductor device | — | 2001-02-20 |
| 6090692 | Fabrication method for semiconductor memory device | — | 2000-07-18 |
| 5942450 | Method of fabricating semiconductor device | — | 1999-08-24 |
| 5895258 | Semiconductor device fabrication method | — | 1999-04-20 |