| 7410890 |
Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation |
Allen R. Kirkpatrick, Sean R. Kirkpatrick, Martin D. Tabat, Thomas G. Tetreault, John Hautala +1 more |
2008-08-12 |
| 7396745 |
Formation of ultra-shallow junctions by gas-cluster ion irradiation |
John Hautala, Wesley Skinner |
2008-07-08 |
| 7259036 |
Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products |
John Hautala, Wesley Skinner, Martin D. Tabat |
2007-08-21 |
| 6187643 |
Simplified semiconductor device manufacturing using low energy high tilt angle and high energy post-gate ion implantation (PoGI) |
— |
2001-02-13 |
| 5821589 |
Method for cmos latch-up improvement by mev billi (buried implanted layer for laternal isolation) plus buried layer implantation |
— |
1998-10-13 |
| 5814866 |
Semiconductor device having at least one field oxide area and CMOS vertically modulated wells (VMW) with a buried implanted layer for lateral isolation having a first portion below a well, a second portion forming another, adjacent well, and a vertical po |
— |
1998-09-29 |
| 5501993 |
Method of constructing CMOS vertically modulated wells (VMW) by clustered MeV BILLI (buried implanted layer for lateral isolation) implantation |
— |
1996-03-26 |
| 4975385 |
Method of constructing lightly doped drain (LDD) integrated circuit structure |
Israel Beinglass |
1990-12-04 |
