Issued Patents All Time
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12060650 | Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same | Ilya Zwieback, Varatharajan Rengarajan, Andrew E. Souzis | 2024-08-13 |
| 12006591 | Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material | Ilya Zwieback, Varatharajan Rengarajan, Andrew E. Souzis | 2024-06-11 |
| RE48378 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Ilya Zwieback, Ping Wu, Varatharajan Rengarajan, Avinash Gupta, Thomas E. Anderson +2 more | 2021-01-05 |
| 10793972 | High quality silicon carbide crystals and method of making the same | Xueping Xu, Avinash Gupta, Mark Spiridonovich Ramm, Ilya Zwieback, Varatharajan Rengarajan | 2020-10-06 |
| RE46315 | Large diameter, high quality SiC single crystals, method and apparatus | Ilya Zwieback, Thomas E. Anderson, Andrew E. Souzis, Avinash Gupta, Varatharajan Rengarajan +2 more | 2017-02-21 |
| 9388509 | Method for synthesizing ultrahigh-purity silicon carbide | Ilya Zwieback, Avinash Gupta, Ping Wu, Donovan L. Barrett, Thomas E. Anderson | 2016-07-12 |
| 9322110 | Vanadium doped SiC single crystals and method thereof | Ilya Zwieback, Thomas E. Anderson, Avinash Gupta, Michael C. Nolan, Bryan K. Brouhard | 2016-04-26 |
| 9090989 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Ilya Zwieback, Ping Wu, Varatharajan Rengarajan, Avinash Gupta, Thomas E. Anderson +2 more | 2015-07-28 |
| 8741413 | Large diameter, high quality SiC single crystals, method and apparatus | Ilya Zwieback, Thomas E. Anderson, Andrew E. Souzis, Avinash Gupta, Varatharajan Rengarajan +2 more | 2014-06-03 |