Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11621270 | Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon | Kunal Shrotri, Anish A. Khandekar | 2023-04-04 |
| 11404571 | Methods of forming NAND memory arrays | Chris M. Carlson, Hung-Wei Liu, Jie Li | 2022-08-02 |
| 11329062 | Memory arrays and methods used in forming a memory array | Justin B. Dorhout, Erik Byers, Merri L. Carlson, Indra V. Chary, Damir Fazil +6 more | 2022-05-10 |
| 11309321 | Integrated structures containing vertically-stacked memory cells | Haitao Liu, Chandra Mouli, Sergei Koveshnikov, Guangyu Huang | 2022-04-19 |
| 11094705 | Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon | Kunal Shrotri, Anish A. Khandekar | 2021-08-17 |
| 10892268 | Integrated structures containing vertically-stacked memory cells | Haitao Liu, Chandra Mouli, Sergei Koveshnikov, Guangyu Huang | 2021-01-12 |
| 10854747 | NAND memory arrays, devices comprising semiconductor channel material and nitrogen, and methods of forming NAND memory arrays | Chris M. Carlson, Hung-Wei Liu, Jie Li | 2020-12-01 |
| 10658382 | Elevationally-extending string of memory cells individually comprising a programmable charge storage transistor and method of forming an elevationally-extending string of memory cells individually comprising a programmable charge storage transistor | John D. Hopkins, David Daycock, Yushi Hu, Christopher J. Larsen | 2020-05-19 |
| 10586807 | Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks | Zhiqiang Xie, Chris M. Carlson, Justin B. Dorhout, Anish A. Khandekar, Greg Light +3 more | 2020-03-10 |
| 10446681 | NAND memory arrays, and devices comprising semiconductor channel material and nitrogen | Chris M. Carlson, Hung-Wei Liu, Jie Li | 2019-10-15 |
| 10388665 | Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack | Zhiqiang Xie, Chris M. Carlson, Justin B. Dorhout, Anish A. Khandekar, Greg Light +3 more | 2019-08-20 |
| 10381365 | Integrated structures containing vertically-stacked memory cells | Haitao Liu, Chandra Mouli, Sergei Koveshnikov, Guangyu Huang | 2019-08-13 |
| 10381367 | Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon | Kunal Shrotri, Anish A. Khandekar | 2019-08-13 |
| 10283520 | Elevationally-extending string of memory cells individually comprising a programmable charge storage transistor and method of forming an elevationally-extending string of memory cells individually comprising a programmable charge storage transistor | John D. Hopkins, David Daycock, Yushi Hu, Christopher J. Larsen | 2019-05-07 |
| 10014311 | Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon | Kunal Shrotri, Anish A. Khandekar | 2018-07-03 |
| 9761599 | Integrated structures containing vertically-stacked memory cells | Haitao Liu, Chandra Mouli, Sergei Koveshnikov, Guangyu Huang | 2017-09-12 |