Issued Patents All Time
Showing 25 most recent of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9525067 | Method for forming integrated circuits on a strained semiconductor substrate | Aomar Halimaoui | 2016-12-20 |
| 9356094 | Method for making a semi-conducting substrate located on an insulation layer | Aomar Halimaoui | 2016-05-31 |
| 8906776 | Method for forming integrated circuits on a strained semiconductor substrate | Aomar Halimaoui | 2014-12-09 |
| 8895420 | Method of fabricating a device with a concentration gradient and the corresponding device | Yves Morand | 2014-11-25 |
| 8575011 | Method of fabricating a device with a concentration gradient and the corresponding device | Yves Morand | 2013-11-05 |
| 8536027 | Method for making a semi-conducting substrate located on an insulation layer | Aomar Halimaoui | 2013-09-17 |
| 8263965 | Single-crystal semiconductor layer with heteroatomic macro-network | Yves Campidelli, Oliver Kermarrec | 2012-09-11 |
| 8154091 | Integrated electronic circuit including a thin film portion based on hafnium oxide | Catherine A. Dubourdieu, Erwan Yann Rauwel, Vincent Cosnier, Sandrine Lhostis | 2012-04-10 |
| 8049224 | Process for transferring a layer of strained semiconductor material | Bruno Ghyselen, Thomas Skotnicki | 2011-11-01 |
| 7884352 | Single-crystal semiconductor layer with heteroatomic macronetwork | Yves Campidelli, Oliver Kermarrec | 2011-02-08 |
| 7879679 | Electronic component manufacturing method | Oliver Kermarrec, Yves Campidelli | 2011-02-01 |
| 7803694 | Process for transferring a layer of strained semiconductor material | Bruno Ghyselen, Thomas Skotnicki | 2010-09-28 |
| 7534701 | Process for transferring a layer of strained semiconductor material | Bruno Ghyselen, Thomas Skotnicki | 2009-05-19 |
| 7381267 | Heteroatomic single-crystal layers | Olivier Kermarrec, Yves Morand, Yves Campidelli, Vincent Cosnier | 2008-06-03 |
| 7338883 | Process for transferring a layer of strained semiconductor material | Bruno Ghyselen, Thomas Skotnicki | 2008-03-04 |
| 7279404 | Process for fabricating strained layers of silicon or of a silicon/germanium alloy | Aomar Halimaoui | 2007-10-09 |
| 7129563 | Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material | Vincent Cosnier, Yves Morand, Olivier Kermarrec, Yves Campidelli | 2006-10-31 |
| 7033438 | Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate | — | 2006-04-25 |
| 6989570 | Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit | Thomas Skotnicki | 2006-01-24 |
| 6969661 | Method for forming a localized region of a material difficult to etch | Aomar Halimaoui | 2005-11-29 |
| 6953736 | Process for transferring a layer of strained semiconductor material | Bruno Ghyselen, Thomas Skotnicki | 2005-10-11 |
| 6690027 | Method for making a device comprising layers of planes of quantum dots | Yves Campidelli, Caroline Hernandez | 2004-02-10 |
| 6596555 | Forming of quantum dots | Olivier Kermarrec, Yves Campidelli | 2003-07-22 |
| 6551698 | Method for treating a silicon substrate, by nitriding, to form a thin insulating layer | Francois Martin, Caroline Hernandez, Laurent Vallier | 2003-04-22 |
| 6537370 | Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained | Caroline Hernandez, Yves Campidelli | 2003-03-25 |