AG

Avinash Gupta

II Ii-Vi Incorporated: 16 patents #2 of 93Top 3%
ID Ii-Vi Delaware: 5 patents #41 of 394Top 15%
AI Allstate Insurance: 4 patents #190 of 584Top 35%
LT Lummus Technology: 4 patents #76 of 280Top 30%
ST Solar Reactor Technologies: 3 patents #3 of 5Top 60%
VI Visa: 1 patents #1,299 of 2,009Top 65%
IM Ii-Vi Advanced Materials: 1 patents #9 of 12Top 75%
LC Lummus Crest: 1 patents #24 of 57Top 45%
YH Yahoo Holdings: 1 patents #1,285 of 2,500Top 55%
AC Abb Lummus Crest: 1 patents #9 of 52Top 20%
Overall (All Time): #89,022 of 4,157,543Top 3%
37
Patents All Time

Issued Patents All Time

Showing 25 most recent of 37 patents

Patent #TitleCo-InventorsDate
12182290 Universal access layer for accessing heterogeneous data stores Kevin Yang, Hruday Kamble 2024-12-31
12165210 Distributed processing to provide transparency in rate determination Kevin Yang, Hruday Kamble 2024-12-10
12125057 System, method, and computer program product for segmenting accounts Manoj Sreekumaran Nair, Sunali Sood, Dmytro Dovgan, Ghanashyama Mahanty 2024-10-22
12020207 Canonical model for product development Kevin Yang, Hruday Kamble 2024-06-25
11905618 Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof Xueping Xu, Ilya Zwieback, Varatharajan Rengarajan 2024-02-20
11761117 SiC single crystal sublimation growth apparatus Ilya Zwieback, Edward Semenas, Marcus Getkin, Patrick Flynn 2023-09-19
11461488 Universal access layer for accessing heterogeneous data stores Kevin Yang, Hruday Kamble 2022-10-04
11149359 SiC single crystal sublimation growth apparatus Ilya Zwieback, Edward Semenas, Marcus Getkin, Patrick Flynn 2021-10-19
11035054 Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof Xueping Xu, Ilya Zwieback, Varatharajan Rengarajan 2021-06-15
RE48378 Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof Ilya Zwieback, Ping Wu, Varatharajan Rengarajan, Thomas E. Anderson, Gary E. Ruland +2 more 2021-01-05
10793972 High quality silicon carbide crystals and method of making the same Xueping Xu, Mark Spiridonovich Ramm, Ilya Zwieback, Varatharajan Rengarajan, Gary E. Ruland 2020-10-06
10294584 SiC single crystal sublimation growth method and apparatus Ilya Zwieback, Edward Semenas, Marcus Getkin, Patrick Flynn 2019-05-21
9873839 Multistage resid hydrocracking Mario C. Baldassari, Ujjal K. Mukherjee 2018-01-23
RE46315 Large diameter, high quality SiC single crystals, method and apparatus Ilya Zwieback, Thomas E. Anderson, Andrew E. Souzis, Gary E. Ruland, Varatharajan Rengarajan +2 more 2017-02-21
9523048 Pre-sulfiding and pre-conditioning of residuum hydroconversion catalysts for ebullated-bed hydroconversion processes Mario C. Baldassari, Ujjal K. Mukherjee 2016-12-20
9441174 Multistage resid hydrocracking Mario C. Baldassari, Ujjal K. Mukherjee 2016-09-13
9388509 Method for synthesizing ultrahigh-purity silicon carbide Ilya Zwieback, Ping Wu, Donovan L. Barrett, Gary E. Ruland, Thomas E. Anderson 2016-07-12
9322110 Vanadium doped SiC single crystals and method thereof Ilya Zwieback, Thomas E. Anderson, Michael C. Nolan, Bryan K. Brouhard, Gary E. Ruland 2016-04-26
9090989 Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof Ilya Zwieback, Ping Wu, Varatharajan Rengarajan, Thomas E. Anderson, Gary E. Ruland +2 more 2015-07-28
9017629 Intra-cavity gettering of nitrogen in SiC crystal growth Ilya Zwieback, Donovan L. Barrett 2015-04-28
8871025 SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique Utpal Kumar Chakrabarti, Jihong Chen, Edward Semenas, Ping Wu 2014-10-28
8858709 Silicon carbide with low nitrogen content and method for preparation Ilya Zwieback 2014-10-14
8741413 Large diameter, high quality SiC single crystals, method and apparatus Ilya Zwieback, Thomas E. Anderson, Andrew E. Souzis, Gary E. Ruland, Varatharajan Rengarajan +2 more 2014-06-03
8512471 Halosilane assisted PVT growth of SiC Ilya Zwieback, Thomas E. Anderson 2013-08-20
8361227 Silicon carbide single crystals with low boron content Ilya Zwieback, Thomas E. Anderson 2013-01-29