Sameer D. Parab — 10 Patents at Intersil Americas

Sameer D. Parab has been granted 10 US patents while listed as an inventor at Intersil Americas. The first was granted in 1998 and the most recent in February 2015. Sameer D. Parab ranks #481,000 of 4,157,543 US inventors in our database (top 11.6%). Patent records list Sameer D. Parab in San Jose, CA, US.

Issued Patents All Time

Showing 1–10 of 10 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
8946912	Active area bonding compatible high current structures	John T. Gasner, Michael D. Church, Paul E. Bakeman, Jr., David A. Decrosta, Robert Lomenick +1 more	2015-02-03	$7,161,000
8652960	Active area bonding compatible high current structures	John T. Gasner, Michael D. Church, Paul E. Bakeman, Jr., David A. Decrosta, Robert Lomenick +1 more	2014-02-18	$9,508,000
8569896	Active area bonding compatible high current structures	John T. Gasner, Michael D. Church, Paul E. Bakeman, Jr., David A. Decrosta, Robert Lomenick +1 more	2013-10-29	$1,586,000
8274160	Active area bonding compatible high current structures	John T. Gasner, Michael D. Church, Paul E. Bakeman, Jr., David A. Decrosta, Robert Lomenick +1 more	2012-09-25	$3,599,000
7795130	Active area bonding compatible high current structures	John T. Gasner, Michael D. Church, Paul E. Bakeman, Jr., David A. Decrosta, Robert Lomenick +1 more	2010-09-14	$4,168,000
7224074	Active area bonding compatible high current structures	John T. Gasner, Michael D. Church, Paul E. Bakeman, Jr., David A. Decrosta, Robert Lomenic +1 more	2007-05-29	$15,074,000
7005369	Active area bonding compatible high current structures	John T. Gasner, Michael D. Church, Paul E. Bakeman, Jr., David A. Decrosta, Robert Lomenick +1 more	2006-02-28
6617646	Reduced substrate capacitance high performance SOI process	—	2003-09-09
6403447	Reduced substrate capacitance high performance SOI process	—	2002-06-11
5846374	Gas agitated liquid etcher	Mark A. Salsbery	1998-12-08	$804,000

Sameer D. Parab — 10 Patents

Issued Patents All Time

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