| 12453145 |
Single gated 3D nanowire inverter for high density thick gate SoC applications |
Ramachandran Ramaswamy, Walid M. Hafez, Tanuj Trivedi, Jeenok T. Kim, Babak Fallahazad +2 more |
2025-10-21 |
|
| 12369358 |
Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devices |
Tanuj Trivedi, Rahul Ramaswamy, Jeong Dong Kim, Walid M. Hafez, Babak Fallahazad +2 more |
2025-07-22 |
|
| 12349411 |
Gate-all-around integrated circuit structures having dual nanoribbon channel structures |
Tanuj Trivedi, Rahul Ramaswamy, Jeong Dong Kim, Babak Fallahazad, Hsu-Yu Chang +2 more |
2025-07-01 |
|
| 12249622 |
Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications |
Tanuj Trivedi, Rahul Ramaswamy, Jeong Dong Kim, Walid M. Hafez, Babak Fallahazad +2 more |
2025-03-11 |
|
| 12089411 |
Self-aligned front-end charge trap flash memory cell and capacitor design for integrated high-density scaled devices |
Tanuj Trivedi, Walid M. Hafez, Rohan K. Bambery, Daniel B. O'Brien, Christopher Alan Nolph +1 more |
2024-09-10 |
$16,964,000 |
| 12040395 |
High voltage extended-drain MOS (EDMOS) nanowire transistors |
Nidhi Nidhi, Rahul Ramaswamy, Walid M. Hafez, Hsu-Yu Chang, Babak Fallahazad +2 more |
2024-07-16 |
$26,089,000 |
| 11996403 |
ESD diode solution for nanoribbon architectures |
Nidhi Nidhi, Rahul Ramaswamy, Walid M. Hafez, Hsu-Yu Chang, Babak Fallahazad +4 more |
2024-05-28 |
$30,739,000 |
| 11862703 |
Gate-all-around integrated circuit structures having dual nanoribbon channel structures |
Tanuj Trivedi, Rahul Ramaswamy, Jeong Dong Kim, Babak Fallahazad, Hsu-Yu Chang +2 more |
2024-01-02 |
$30,016,000 |
| 11791380 |
Single gated 3D nanowire inverter for high density thick gate SOC applications |
Rahul Ramaswamy, Walid M. Hafez, Tanuj Trivedi, Jeong Dong Kim, Babak Fallahazad +2 more |
2023-10-17 |
$15,641,000 |
| 11581404 |
Gate-all-around integrated circuit structures having depopulated channel structures |
Tanuj Trivedi, Jeong Dong Kim, Walid M. Hafez, Hsu-Yu Chang, Rahul Ramaswamy +1 more |
2023-02-14 |
$12,790,000 |
| 11437483 |
Gate-all-around integrated circuit structures having dual nanoribbon channel structures |
Tanuj Trivedi, Rahul Ramaswamy, Jeong Dong Kim, Babak Fallahazad, Hsu-Yu Chang +2 more |
2022-09-06 |
$12,766,000 |
| 11094782 |
Gate-all-around integrated circuit structures having depopulated channel structures |
Tanuj Trivedi, Jeong Dong Kim, Walid M. Hafez, Hsu-Yu Chang, Rahul Ramaswamy +1 more |
2021-08-17 |
$29,127,000 |
| 10847456 |
Antifuse element using spacer breakdown |
Chia-Hong Jan, Walid M. Hafez |
2020-11-24 |
$25,522,000 |
| 10763209 |
MOS antifuse with void-accelerated breakdown |
Roman W. Olac-Vaw, Walid M. Hafez, Chia-Hong Jan, Hsu-Yu Chang, Rahul Ramaswamy +2 more |
2020-09-01 |
$24,773,000 |
| 10312367 |
Monolithic integration of high voltage transistors and low voltage non-planar transistors |
Kinyip Phoa, Nidhi Nidhi, Chia-Hong Jan |
2019-06-04 |
$21,702,000 |
| 10192969 |
Transistor gate metal with laterally graduated work function |
Chia-Hong Jan, Walid M. Hafez, Hsu-Yu Chang, Roman W. Olac-Vaw, Rahul Ramaswamy +2 more |
2019-01-29 |
$23,219,000 |
| 10164115 |
Non-linear fin-based devices |
Neville L. Dias, Chia-Hong Jan, Walid M. Hafez, Roman W. Olac-Vaw, Hsu-Yu Chang +2 more |
2018-12-25 |
|
| 9929090 |
Antifuse element using spacer breakdown |
Chia-Hong Jan, Walid M. Hafez |
2018-03-27 |
$21,620,000 |
| 9799668 |
Memory cell having isolated charge sites and method of fabricating same |
Chia-Hong Jan, Walid M. Hafez |
2017-10-24 |
$10,797,000 |
| 6810500 |
Method for mapping a two-dimensional data array in a memory |
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2004-10-26 |
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