Issued Patents All Time
Showing 26–38 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9809877 | Ion implantation apparatus with ion beam directing unit | Alexander Breymesser, Hans-Joachim Schulze, Werner Schustereder | 2017-11-07 |
| 9754787 | Method for treating a semiconductor wafer | Johannes Georg Laven, Hans-Joachim Schulze, Alexander Breymesser, Alexander Susiti, Shuhai Liu +1 more | 2017-09-05 |
| 9704712 | Method of making a semiconductor device formed by thermal annealing | Alexander Breymesser | 2017-07-11 |
| 9548370 | Transistor device with integrated gate-resistor | Peter Tuerkes, Holger Huesken | 2017-01-17 |
| 9508812 | Semiconductor device | Hans-Joachim Schulze, Markus Zundel | 2016-11-29 |
| 9390883 | Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing | Alexander Breymesser, Hans-Joachim Schulze, Werner Schustereder | 2016-07-12 |
| 9224806 | Edge termination structure with trench isolation regions | Alexander Breymesser, Hans-Joachim Schulze, Erich Griebl, Oliver Haeberlen, Andreas Moser | 2015-12-29 |
| 9111989 | Insulated gate bipolar transistor including emitter short regions | Erich Griebl, Alexander Breymesser | 2015-08-18 |
| 9082741 | Semiconductor device including first and second semiconductor materials | Franz-Josef Niedernostheide, Hans-Joachim Schulze | 2015-07-14 |
| 9041120 | Power MOS transistor with integrated gate-resistor | Peter Tuerkes, Holger Huesken | 2015-05-26 |
| 8866255 | Semiconductor device with staggered oxide-filled trenches at edge region | Hans-Joachim Schulze, Markus Zundel | 2014-10-21 |
| 8343862 | Semiconductor device with a field stop zone and process of producing the same | Hans-Joachim Schulze, Frank Pfirsch, Franz-Josef Niedernostheide | 2013-01-01 |
| 7989888 | Semiconductor device with a field stop zone and process of producing the same | Hans-Joachim Schulze, Frank Pfirsch, Franz-Josef Niedernostheide | 2011-08-02 |