Issued Patents All Time
Showing 76–100 of 112 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6504200 | DRAM cell configuration and fabrication method | Till Schlosser, Bernhard Sell | 2003-01-07 |
| 6492221 | DRAM cell arrangement | Franz Hofmann, Till Schloesser | 2002-12-10 |
| 6475866 | Method for production of a memory cell arrangement | Franz Hofmann, Wolfgang Krautschneider | 2002-11-05 |
| 6448600 | DRAM cell configuration and fabrication method | Till Schlosser, Franz Hofmann | 2002-09-10 |
| 6445046 | Memory cell arrangement and process for manufacturing the same | Franz Hofmann, Hans Reisinger, Paul-Werner von Basse, Wolfgang Krautschneider | 2002-09-03 |
| 6442065 | Method for operating a memory cell configuration having dynamic gain memory cells | Franz Hofmann, Wolfgang Krautschneider, Till Schlosser | 2002-08-27 |
| 6403440 | Method for fabricating a stacked capacitor in a semiconductor configuration, and stacked capacitor fabricated by this method | Emmerich Bertagnolli | 2002-06-11 |
| 6399433 | Method for fabricating a memory cell | Franz Hofmann, Wolfgang Krautschneider, Till Schlosser | 2002-06-04 |
| 6365888 | Method for capacitive image acquisition | Paul-Werner von Basse, Thomas Scheiter, Stephan Marksteiner | 2002-04-02 |
| 6359296 | Circuit arrangement with at least one capacitor | — | 2002-03-19 |
| 6316315 | Method for fabricating a memory cell having a MOS transistor | Franz Hofmann | 2001-11-13 |
| 6309930 | SRAM cell arrangement and method for manufacturing same | Bernd Goebel, Emmerich Bertagnolli, Barbara Hasler, Paul-Werner von Basse | 2001-10-30 |
| 6265748 | Storage cell arrangement in which vertical MOS transistors have at least three different threshold voltages depending on stored data, and method of producing said arrangement | Franz Hofmann, Wolfgang Krautschneider | 2001-07-24 |
| 6242319 | Method for fabricating an integrated circuit configuration | Franz Hofmann | 2001-06-05 |
| 6222753 | SRAM cell arrangement and method for manufacturing same | Bernd Goebel, Emmerich Bertagnolli, Barbara Hasler, Paul-Werner von Basse | 2001-04-24 |
| 6194765 | Integrated electrical circuit having at least one memory cell and method for fabricating it | Hans Reisinger, Reinhard Stengl, Ulrike Gruning, Volker Lehmann, Hermann Wendt +2 more | 2001-02-27 |
| 6191459 | Electrically programmable memory cell array, using charge carrier traps and insulation trenches | Franz Hofmann, Wolfgang Krautschneider, Hans Reisinger | 2001-02-20 |
| 6180979 | Memory cell arrangement with vertical MOS transistors and the production process thereof | Franz Hofmann, Wolfgang Krautschneider | 2001-01-30 |
| 6165835 | Method for producing a silicon capacitor | Hermann Wendt, Hans Reisinger, Andreas Spitzer, Reinhard Stengl, Ulrike Gruning +2 more | 2000-12-26 |
| 6153475 | Method for the manufacturing a memory cell configuration | Franz Hofmann, Hans Reisinger, Wolfgang Krautschneider, Paul-Werner von Basse | 2000-11-28 |
| 6125050 | Configuration for driving parallel lines in a memory cell configuration | Franz Hofmann, Hans Reisinger, Paul-Werner Basse, Wolfgang Krautschneider | 2000-09-26 |
| 6118159 | Electrically programmable memory cell configuration | Franz Hofmann, Hans Reisinger, Emmerich Bertagnolli, Bernd Gobel, Barbara Hasler +1 more | 2000-09-12 |
| 6040995 | Method of operating a storage cell arrangement | Hans Reisinger, Ulrike Gruning, Hermann Wendt, Reinhard Stengl, Volker Lehmann +5 more | 2000-03-21 |
| 6033534 | Method for producing an Al-containing layer with a planar surface on a substrate having hole structures with a high aspect ratio in the surface | Hermann Wendt, Volker Lehmann | 2000-03-07 |
| 5994746 | Memory cell configuration and method for its fabrication | Hans Reisinger, Reinhard Stengl, Franz Hofmann, Wolfgang Krautschneider | 1999-11-30 |