EB

Emmerich Bertagnolli

SA Siemens Aktiengesellschaft: 25 patents #191 of 22,248Top 1%
Infineon Technologies Ag: 6 patents #1,452 of 7,486Top 20%
CG Carl Zeiss Microscopy Gmbh: 3 patents #151 of 564Top 30%
CG Carl Zeiss Nts Gmbh: 2 patents #17 of 103Top 20%
AG Austria Wirtschaftsservice Gmbh: 1 patents #3 of 13Top 25%
Overall (All Time): #79,919 of 4,157,543Top 2%
40
Patents All Time

Issued Patents All Time

Showing 1–25 of 40 patents

Patent #TitleCo-InventorsDate
9006681 Method of depositing protective structures Heinz Wanzenboeck, Wolfram Buehler, Holger Doemer, Carl Kuebler, Daniel Fischer +1 more 2015-04-14
8939108 Processing system Heinz Wanzenboeck, Wolfram Buehler, Camille Stebler, Ulrike Zeile, Alexander Rosenthal 2015-01-27
8507854 Particle beam microscopy system and method for operating the same Wolfram Buehler, Holger Doemer, Matthias Lang, Joerg Stodolka, Peter Roediger +1 more 2013-08-13
8143594 Method of depositing protective structures Heinz Wanzenboeck, Wolfram Buehler, Holger Doemer, Carl Kuebler, Daniel Fischer +1 more 2012-03-27
8008639 System for processing an object Wolfram Buhler, Alexander Rosenthal, Camille Stebler, Heinz Wanzenbock 2011-08-30
7923702 System and method for processing an object Wolfram Buhler, Alexander Rosenthal, Heinz Wanzenbock, Markus Fischer, Gottfried Hochleitner 2011-04-12
7084442 Double gate transistor arrangement for receiving electrical signals from living cells 2006-08-01
7074340 Method for producing a device for simultaneously carrying out an electrochemical and a topographical near-field microscopy Alois Lugstein, Christine Kranz, Boris Mizaikoff 2006-07-11
6894272 Device for simultaneously carrying out an electrochemical and a topographical near-field microscopy Christine Kranz, Boris Mizaikoff, Alois Lugstein 2005-05-17
6642565 Miniaturized capacitor with solid-state dielectric, in particular for integrated semiconductor memories, E.G. DRAMS, and method for fabricating such a capacitor Till Schlosser, Josef Willer 2003-11-04
6586795 DRAM cell configuration whose memory cells can have transistors and capacitors with improved electrical properties Bernd Goebel 2003-07-01
6583464 Memory cell using amorphous material to stabilize the boundary face between polycrystalline semiconductor material of a capacitor and monocrystalline semiconductor material of a transistor Gustav Beckmann, Michael Bianco, Helmut Klose 2003-06-24
6566202 Integrated circuit having at least two vertical MOS transistors and method for manufacturing same Bernd Goebel 2003-05-20
6403440 Method for fabricating a stacked capacitor in a semiconductor configuration, and stacked capacitor fabricated by this method Josef Willer 2002-06-11
6379978 Memory cell configuration in which an electrical resistance of a memory element represents an information item and can be influenced by a magnetic field, and method for fabricating it Bernd Goebel, Hermann Jacobs, Siegfried Schwarzl 2002-04-30
6376313 Integrated circuit having at least two vertical MOS transistors and method for manufacturing same Bernd Goebel 2002-04-23
6352894 Method of forming DRAM cell arrangement Bernd Goebel, Wolfgang Roesner, Franz Hofmann, Eve Marie Martin 2002-03-05
6309930 SRAM cell arrangement and method for manufacturing same Bernd Goebel, Josef Willer, Barbara Hasler, Paul-Werner von Basse 2001-10-30
6222753 SRAM cell arrangement and method for manufacturing same Bernd Goebel, Josef Willer, Barbara Hasler, Paul-Werner von Basse 2001-04-24
6211019 Read-only memory cell device and method for its production Helmut Klose 2001-04-03
6172391 DRAM cell arrangement and method for the manufacture thereof Bernd Goebel, Helmut Klose 2001-01-09
6118159 Electrically programmable memory cell configuration Josef Willer, Franz Hofmann, Hans Reisinger, Bernd Gobel, Barbara Hasler +1 more 2000-09-12
6097049 DRAM cell arrangement Bernd Goebel, Eve Marie Martin 2000-08-01
6087692 DRAM cell configuration and method for its fabrication Bernd Gobel 2000-07-11
6075265 DRAM cell arrangement and method for its fabrication Bernd Goebel 2000-06-13