PT

Philip L. Trouilloud

IBM: 51 patents #1,671 of 70,183Top 3%
CS Crocus Technology Sa: 6 patents #11 of 34Top 35%
Infineon Technologies Ag: 5 patents #4,439 of 7,486Top 60%
QA Qimonda Ag: 1 patents #252 of 575Top 45%
📍 Norwood, NY: #1 of 10 inventorsTop 10%
🗺 New York: #1,754 of 115,490 inventorsTop 2%
Overall (All Time): #51,043 of 4,157,543Top 2%
52
Patents All Time

Issued Patents All Time

Showing 26–50 of 52 patents

Patent #TitleCo-InventorsDate
7768809 Wall nucleation propagation for racetrack memory 2010-08-03
7622735 Wafer for electrically characterizing tunnel junction film stacks with little or no processing Daniel C. Worledge, David W. Abraham, Joerg Schmid 2009-11-24
7622784 MRAM device with improved stack structure and offset field for low-power toggle mode writing 2009-11-24
7536612 Field spike monitor for MRAM David W. Abraham 2009-05-19
7477567 Memory storage device with heating element David W. Abraham 2009-01-13
7473656 Method for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks Ulrich Klostermann, Wolfgang Raberg 2009-01-06
7453747 Active compensation for operating point drift in MRAM write operation David W. Abraham 2008-11-18
7330371 Method and structure for generating offset fields for use in MRAM devices Michael C. Gaidis 2008-02-12
7286421 Active compensation for operating point drift in MRAM write operation David W. Abraham 2007-10-23
7133309 Method and structure for generating offset fields for use in MRAM devices Michael C. Gaidis 2006-11-07
7102916 Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption David W. Abraham, John K. DeBrosse, Daniel C. Worledge 2006-09-05
7061787 Field ramp down for pinned synthetic antiferromagnet Ulrich Klostermann 2006-06-13
6958929 Sensor compensation for environmental variations for magnetic random access memory David W. Abraham 2005-10-25
6927569 Techniques for electrically characterizing tunnel junction film stacks with little or no processing Daniel C. Worledge, David W. Abraham, Joerg Schmid 2005-08-09
6724674 Memory storage device with heating element David W. Abraham 2004-04-20
6667897 Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layer David W. Abraham 2003-12-23
6623158 Method and apparatus for thermal proximity imaging using pulsed energy David W. Abraham, Timothy J. Chainer 2003-09-23
6590750 Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices David W. Abraham, Philip Edward Batson, John Casimir Slonczewski, William J. Gallagher, Stuart Stephen Papworth Parkin 2003-07-08
6538919 Magnetic tunnel junctions using ferrimagnetic materials David W. Abraham, Stuart Stephen Papworth Parkin, John Casimir Slonczewski 2003-03-25
6452764 Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices David W. Abraham, Philip Edward Batson, William J. Gallagher, Stuart Stephen Papworth Parkin, John Casimir Slonczewski 2002-09-17
6385082 Thermally-assisted magnetic random access memory (MRAM) David W. Abraham 2002-05-07
6368878 Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices David W. Abraham, William J. Gallagher 2002-04-09
6104633 Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices David W. Abraham, William J. Gallagher 2000-08-15
6072718 Magnetic memory devices having multiple magnetic tunnel junctions therein David W. Abraham, William J. Gallagher 2000-06-06
5946228 Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices David W. Abraham 1999-08-31