Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5686330 | Method of making a self-aligned static induction transistor | Joseph E. Farb | 1997-11-11 |
| 5643815 | Super self-align process for fabricating submicron CMOS using micron design rule fabrication equipment | Truc Q. Vu | 1997-07-01 |
| 5523244 | Transistor fabrication method using dielectric protection layers to eliminate emitter defects | Truc Q. Vu, Mei Li | 1996-06-04 |
| 5491365 | Self-aligned ion implanted transition metal contact diffusion barrier apparatus | Gary Warren, Kuan-Yang Liao | 1996-02-13 |
| 5479047 | Self-aligned bipolar transistor with very thin dielectric layer interfacing between poly and active area | Kuan-Yang Liao | 1995-12-26 |
| 5407841 | CBiCMOS fabrication method using sacrificial gate poly | Kuan-Yang Liao, Pen-Chih Chou, Kirk R. Osborne | 1995-04-18 |
| 5389575 | Self-aligned contact diffusion barrier method | Gary Warren, Kuan-Yang Liao | 1995-02-14 |
| 5260227 | Method of making a self aligned static induction transistor | Joseph E. Farb, Kuan-Yang Liao | 1993-11-09 |
| 5185535 | Control of backgate bias for low power high speed CMOS/SOI devices | Joseph E. Farb, Mei Li, Chen-Chi P. Chang | 1993-02-09 |
| 5140390 | High speed silicon-on-insulator device | Mei Li, Chen-Chi P. Chang | 1992-08-18 |
| 5047356 | High speed silicon-on-insulator device and process of fabricating same | Mei Li, Chen-Chi P. Chang | 1991-09-10 |
| 4961822 | Fully recessed interconnection scheme with titanium-tungsten and selective CVD tungsten | Kuan-Yang Liao, Yu C. Chow, Charles S. Rhoades | 1990-10-09 |
| 4920403 | Selective tungsten interconnection for yield enhancement | Yu C. Chow, Kuan-Yang Liao, Charles S. Rhoades | 1990-04-24 |
| 4847111 | Plasma-nitridated self-aligned tungsten system for VLSI interconnections | Yu C. Chow, Kuan-Yang Liao | 1989-07-11 |
| 4837051 | Conductive plug for contacts and vias on integrated circuits | Joseph E. Farb | 1989-06-06 |