Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6443037 | Screwdriver grip structure | — | 2002-09-03 |
| 6440782 | Radiation-hard silicon cryo-CMOS process suitable for charge-coupled devices, and a device made according to this process | James S. Cable | 2002-08-27 |
| D459186 | Screwdriver grip | — | 2002-06-25 |
| 6089729 | Ratchet screwdriver with illumination function | — | 2000-07-18 |
| 5879954 | Radiation-hard isoplanar cryo-CMOS process suitable for sub-micron devices | James S. Cable | 1999-03-09 |
| 5807771 | Radiation-hard, low power, sub-micron CMOS on a SOI substrate | Truc Q. Vu, James S. Cable, Mei Li | 1998-09-15 |
| 5652448 | Nonvolatile memory device | Mei Li, Truc Q. Vu | 1997-07-29 |
| 5578515 | Method for fabricating gate structure for nonvolatile memory device comprising an EEPROM and a latch transistor | Mei Li, Truc Q. Vu | 1996-11-26 |
| 5511036 | Flash EEPROM cell and array with bifurcated floating gates | Joseph E. Farb, Mei Li | 1996-04-23 |
| 5378909 | Flash EEPROM cell having gap between floating gate and drain for high hot electron injection efficiency for programming | Mei Li | 1995-01-03 |
| 5343424 | Split-gate flash EEPROM cell and array with low voltage erasure | Mei Li | 1994-08-30 |
| 5185535 | Control of backgate bias for low power high speed CMOS/SOI devices | Joseph E. Farb, Mei Li, Maw-Rong Chin | 1993-02-09 |
| 5140390 | High speed silicon-on-insulator device | Mei Li, Maw-Rong Chin | 1992-08-18 |
| 5137837 | Radiation-hard, high-voltage semiconductive device structure fabricated on SOI substrate | Mei Li | 1992-08-11 |
| 5047356 | High speed silicon-on-insulator device and process of fabricating same | Mei Li, Maw-Rong Chin | 1991-09-10 |
| 5028556 | Process for fabricating radiation hard high voltage devices | — | 1991-07-02 |
| 5028564 | Edge doping processes for mesa structures in SOS and SOI devices | Kuan-Yang Liao, Joseph E. Farb | 1991-07-02 |
| 5024965 | Manufacturing high speed low leakage radiation hardened CMOS/SOI devices | Mei Li | 1991-06-18 |