MP

Mustafa Pinarbasi

HG HGST: 100 patents #2 of 1,677Top 1%
IBM: 72 patents #999 of 70,183Top 2%
SM Spin Memory: 36 patents #1 of 49Top 3%
I( Integrated Silicon Solution, (Cayman): 16 patents #1 of 36Top 3%
ST Spin Transfer Technologies: 13 patents #1 of 25Top 4%
SO Solopower: 8 patents #3 of 19Top 20%
HB Hgst Netherlands, B.V.: 3 patents #257 of 972Top 30%
🗺 California: #342 of 386,348 inventorsTop 1%
Overall (All Time): #1,966 of 4,157,543Top 1%
251
Patents All Time

Issued Patents All Time

Showing 26–50 of 251 patents

Patent #TitleCo-InventorsDate
10777736 Polishing stop layer(s) for processing arrays of semiconductor elements Jacob Anthony Hernandez, Arindom Datta, Marcin Gajek, Parshuram Balkrishna Zantye 2020-09-15
10734574 Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory Bartlomiej Adam Kardasz, Jacob Anthony Hernandez 2020-08-04
10672976 Precessional spin current structure with high in-plane magnetization for MRAM Bartlomiej Adam Kardasz 2020-06-02
10665777 Precessional spin current structure with non-magnetic insertion layer for MRAM Bartlomiej Adam Kardasz 2020-05-26
10651370 Perpendicular magnetic tunnel junction retention and endurance improvement Bartlomiej Adam Kardasz, Jorge Vasquez, Thomas Dudley Boone, Jr. 2020-05-12
10643680 Memory cell having magnetic tunnel junction and thermal stability enhancement layer Bartek Kardasz 2020-05-05
10615335 Spin transfer torque structure for MRAM devices having a spin current injection capping layer Bartlomiej Adam Kardasz 2020-04-07
10615337 Process for creating a high density magnetic tunnel junction array test platform Pradeep Manandhar, Prachi Shrivastava, Thomas Dudley Boone, Jr. 2020-04-07
10580827 Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching Steven M. Watts, Georg Wolf, Kadriye Deniz Bozdag, Bartlomiej Adam Kardasz 2020-03-03
10553787 Precessional spin current structure for MRAM Michail Tzoufras, Bartlomiej Adam Kardasz 2020-02-04
10516094 Process for creating dense pillars using multiple exposures for MRAM fabrication Prachi Shrivastava, Thomas Dudley Boone, Jr. 2019-12-24
10468590 High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory Bartlomiej Adam Kardasz, Jacob Anthony Hernandez 2019-11-05
10468588 Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer Manfred Ernst Schabes, Bartlomiej Adam Kardasz 2019-11-05
10461242 Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications Bartlomiej Adam Kardasz, Jorge Vasquez, Georg Wolf 2019-10-29
10446742 Method for manufacturing a magnetic memory element array using high angle side etch to open top electrical contact Marcin Gajek, Eric Michael Ryan 2019-10-15
10424723 Magnetic tunnel junction devices including an optimization layer Thomas Dudley Boone, Jr., Pradeep Manandhar, Manfred Ernst Schabes, Bartlomiej Adam Kardasz 2019-09-24
10411185 Process for creating a high density magnetic tunnel junction array test platform Pradeep Manandhar, Prachi Shrivastava, Thomas Dudley Boone, Jr. 2019-09-10
10388853 Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayers Bartlomiej Adam Kardasz, Jorge Vasquez, Georg Wolf 2019-08-20
10388860 Method for manufacturing high density magnetic random access memory devices using diamond like carbon hard mask Elizabeth Dobisz, Girish Jagtiani, Yuan-Tung Chin, Thomas Dudley Boone, Jr. 2019-08-20
10381553 Memory cell having magnetic tunnel junction and thermal stability enhancement layer Bartek Kardasz 2019-08-13
10374147 Perpendicular magnetic tunnel junction having improved reference layer stability Bartlomiej Adam Kardasz, Jorge Vasquez, Manfred Ernst Schabes 2019-08-06
10374153 Method for manufacturing a magnetic memory device by pre-patterning a bottom electrode prior to patterning a magnetic material Jorge Vasquez, Bartlomiej Adam Kardasz, Girish Jagtiani 2019-08-06
10367136 Methods for manufacturing a perpendicular magnetic tunnel junction (p-MTJ) MRAM having a precessional spin current injection (PSC) structure Bartlomiej Adam Kardasz, Jorge Vasquez, Georg Wolf 2019-07-30
10367139 Methods of manufacturing magnetic tunnel junction devices Thomas Dudley Boone, Jr., Pradeep Manandhar, Manfred Ernst Schabes, Bartlomiej Adam Kardasz 2019-07-30
10361359 Magnetic random access memory with reduced internal operating temperature range Manfred Ernst Schabes, Thomas Dudley Boone, Jr. 2019-07-23