MP

Mustafa Pinarbasi

HG HGST: 100 patents #2 of 1,677Top 1%
IBM: 72 patents #999 of 70,183Top 2%
SM Spin Memory: 36 patents #1 of 49Top 3%
I( Integrated Silicon Solution, (Cayman): 16 patents #1 of 36Top 3%
ST Spin Transfer Technologies: 13 patents #1 of 25Top 4%
SO Solopower: 8 patents #3 of 19Top 20%
HB Hgst Netherlands, B.V.: 3 patents #257 of 972Top 30%
🗺 California: #342 of 386,348 inventorsTop 1%
Overall (All Time): #1,966 of 4,157,543Top 1%
251
Patents All Time

Issued Patents All Time

Showing 51–75 of 251 patents

Patent #TitleCo-InventorsDate
10339993 Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching Manfred Ernst Schabes, Bartlomiej Adam Kardasz 2019-07-02
10319900 Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density Manfred Ernst Schabes, Bartlomiej Adam Kardasz 2019-06-11
10236439 Switching and stability control for perpendicular magnetic tunnel junction device Manfred Ernst Schabes, Bartlomiej Adam Kardasz 2019-03-19
10211395 Method for combining NVM class and SRAM class MRAM elements on the same chip Bartlomiej Adam Kardasz, Thomas Dudley Boone, Jr. 2019-02-19
10147872 Spin transfer torque structure for MRAM devices having a spin current injection capping layer Bartlomiej Adam Kardasz 2018-12-04
10141499 Perpendicular magnetic tunnel junction device with offset precessional spin current layer Manfred Ernst Schabes, Bartlomiej Adam Kardasz 2018-11-27
10032978 MRAM with reduced stray magnetic fields Manfred Ernst Schabes, Bartlomiej Adam Kardasz 2018-07-24
10026892 Precessional spin current structure for MRAM Michail Tzoufras, Bartlomiej Adam Kardasz 2018-07-17
9853206 Precessional spin current structure for MRAM Michail Tzoufras 2017-12-26
9773974 Polishing stop layer(s) for processing arrays of semiconductor elements Jacob Anthony Hernandez, Arindom Datta, Marcin Gajek, Parshuram Balkrishna Zantye 2017-09-26
9741926 Memory cell having magnetic tunnel junction and thermal stability enhancement layer Bartek Kardasz 2017-08-22
9728712 Spin transfer torque structure for MRAM devices having a spin current injection capping layer Bartlomiej Adam Kardasz 2017-08-08
9406876 Method for manufacturing MTJ memory device 2016-08-02
9337412 Magnetic tunnel junction structure for MRAM device Bartek Kardasz 2016-05-10
9263667 Method for manufacturing MTJ memory device 2016-02-16
9007727 Magnetic head having CPP sensor with improved stabilization of the magnetization of the pinned magnetic layer 2015-04-14
8772076 Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells James Mac Freitag, Jorge Vasquez 2014-07-08
8771419 Roll to roll evaporation tool for solar absorber precursor formation Bulent M. Basol 2014-07-08
8425753 Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films Serdar Aksu 2013-04-23
8409418 Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers Serdar Aksu, Jiaxiong Wang 2013-04-02
8404512 Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers Serdar Aksu 2013-03-26
8393073 Method to control mask profile for read sensor definition Richard J. Contreras, Michael Feldbaum 2013-03-12
8318530 Solar cell buffer layer having varying composition Bulent M. Basol, James Mac Freitag 2012-11-27
8300367 Magnetoresistance sensors pinned by an etch induced magnetic anisotropy James Mac Freitag 2012-10-30
8266785 Method for manufacturing a magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stability James Mac Freitag, Wipul Pemsiri Jayasekara 2012-09-18