ZD

Zhitao Diao

GR Grandis: 18 patents #4 of 36Top 15%
W( Western Digital (Fremont): 12 patents #57 of 473Top 15%
WT Western Digital Technologies: 9 patents #363 of 3,180Top 15%
RT Renesas Technology: 2 patents #1,374 of 3,337Top 45%
Samsung: 2 patents #37,631 of 75,807Top 50%
ST Sandisk Technologies: 1 patents #1,320 of 2,224Top 60%
RE Renesas Electronics: 1 patents #2,739 of 4,529Top 65%
SO Sony: 1 patents #17,262 of 25,231Top 70%
📍 Fremont, CA: #298 of 9,298 inventorsTop 4%
🗺 California: #10,163 of 386,348 inventorsTop 3%
Overall (All Time): #69,686 of 4,157,543Top 2%
43
Patents All Time

Issued Patents All Time

Showing 26–43 of 43 patents

Patent #TitleCo-InventorsDate
7982275 Magnetic element having low saturation magnetization Hide Nagai, Yiming Huai 2011-07-19
7973349 Magnetic device having multilayered free ferromagnetic layer Yiming Huai, Eugene Chen 2011-07-05
7916433 Magnetic element utilizing free layer engineering Yiming Huai, Eugene Chen 2011-03-29
7888755 Magnetic storage device with intermediate layers having different sheet resistivities Masanori Hosomi, Kazuhiro Ohba, Hiroshi Kano, Yiming Huai, Mahendra Pakala 2011-02-15
7859034 Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer Yiming Huai, Eugene Chen 2010-12-28
7851840 Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier Yiming Huai 2010-12-14
7821087 Spin transfer magnetic element having low saturation magnetization free layers Paul P. Nguyen, Yiming Huai, Frank Albert 2010-10-26
7777261 Magnetic device having stabilized free ferromagnetic layer Yiming Huai, Eugene Chen 2010-08-17
7760474 Magnetic element utilizing free layer engineering Yiming Huai, Eugene Chen 2010-07-20
7738287 Method and system for providing field biased magnetic memory devices Lien-Chang Wang, Yiming Huai 2010-06-15
7663848 Magnetic memories utilizing a magnetic element having an engineered free layer Yiming Huai, Eugene Chen 2010-02-16
7495303 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements Yiming Huai, Thierry Valet, Paul P. Nguyen, Mahendra Pakala 2009-02-24
7430135 Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density Yiming Huai, Alex Panchula, Eugene Chen, Lien-Chang Wang 2008-09-30
7369427 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements Yiming Huai, Thierry Valet, Paul P. Nguyen, Mahendra Pakala 2008-05-06
7289356 Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein Yiming Huai, Mahendra Pakala, Zhenghong Qian 2007-10-30
7242045 Spin transfer magnetic element having low saturation magnetization free layers Paul P. Nguyen, Yiming Huai, Frank Albert 2007-07-10
7187577 Method and system for providing current balanced writing for memory cells and magnetic devices Lien-Chang Wang, Yunfei Ding 2007-03-06
6888704 Method and system for providing high sensitivity giant magnetoresistive sensors Min Zhou, Lifan Chen, Wei Xiong 2005-05-03