Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11984348 | Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof | — | 2024-05-14 |
| 11848227 | Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment | Henry F. Erk | 2023-12-19 |
| 11114332 | Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof | — | 2021-09-07 |
| 10985049 | Manufacturing method of smoothing a semiconductor surface | Gang Wang, Charles R. Lottes | 2021-04-20 |
| 10818539 | Manufacturing method of smoothing a semiconductor surface | Gang Wang, Charles R. Lottes | 2020-10-27 |
| 10796946 | Method of manufacture of a semiconductor on insulator structure | Henry F. Erk, Jeffrey L. Libbert, Mayank Bulsara | 2020-10-06 |
| 10755966 | Manufacturing method of smoothing a semiconductor surface | Gang Wang, Charles R. Lottes | 2020-08-25 |
| 10593748 | Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof | — | 2020-03-17 |
| 10573550 | Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof | — | 2020-02-25 |
| 10529616 | Manufacturing method of smoothing a semiconductor surface | Gang Wang, Charles R. Lottes | 2020-01-07 |
| 10475696 | Method of manufacture of a semiconductor on insulator structure | Henry F. Erk, Jeffrey L. Libbert, Mayank Bulsara | 2019-11-12 |
| 10192778 | Semiconductor on insulator structure comprising a sacrificial layer and method of manufacture thereof | — | 2019-01-29 |
| 10026642 | Semiconductor on insulator structure comprising a sacrificial layer and method of manufacture thereof | — | 2018-07-17 |
| 8476142 | Preferential dielectric gapfill | Hiroshi Hamana, Paul Edward Gee, Shankar Venkataraman, Kadar Sapre | 2013-07-02 |
| 8236708 | Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor | Paul Edward Gee, Shankar Venkataraman, Kedar Sapre | 2012-08-07 |
| 7994019 | Silicon-ozone CVD with reduced pattern loading using incubation period deposition | Paul Edward Gee, Shankar Venkataraman, Kedar Sapre | 2011-08-09 |