MC

Min-hwa Chi

Globalfoundries: 120 patents #10 of 4,424Top 1%
TSMC: 56 patents #575 of 12,232Top 5%
NS National Semiconductor: 27 patents #38 of 2,238Top 2%
VS Vanguard International Semiconductor: 19 patents #24 of 585Top 5%
SC Sien (Qingdao) Integrated Circuits Co.: 17 patents #1 of 20Top 5%
WM Worldwide Semiconductor Manufacturing: 10 patents #4 of 58Top 7%
S( Semiconductor Manufacturing International (Shanghai): 9 patents #50 of 1,122Top 5%
FO Foveonics: 6 patents #2 of 7Top 30%
FO Foveon: 3 patents #12 of 65Top 20%
GU Globalfoundries U.S.: 1 patents #344 of 665Top 55%
📍 Qingdao, NY: #1 of 10 inventorsTop 10%
Overall (All Time): #1,618 of 4,157,543Top 1%
273
Patents All Time

Issued Patents All Time

Showing 251–273 of 273 patents

Patent #TitleCo-InventorsDate
5854100 Method of forming a new bipolar/CMOS pixel for high resolution imagers 1998-12-29
5847422 MOS-based active pixel sensor cell that utilizes the parasitic bipolar action of the cell to output image data Lih-Ying Ching, Albert Bergemont 1998-12-08
5837574 Method of manufacturing a thin poly, capacitor coupled contactless imager with high resolution and wide dynamic range Albert Bergemont, Carver A. Mead, Hosam Haggag 1998-11-17
5814856 Variable and tunable V.sub.T MOSFET with poly and/or buried diffusion Albert Bergemont 1998-09-29
5808937 Self-convergent method for programming FLASH and EEPROM memory cells that moves the threshold voltage from an erased threshold voltage range to one of a plurality of programmed threshold voltage ranges Albert Bergemont 1998-09-15
5806054 Neuron MOSFET module structure for binary logic circuits Albert Bergemont 1998-09-08
5786623 Bipolar-based active pixel sensor cell with metal contact and increased capacitive coupling to the base region Albert Bergemont 1998-07-28
5776795 Method of making a contactless capacitor-coupled bipolar active pixel sensor with intergrated electronic shutter Albert Bergemont, Carver A. Mead 1998-07-07
5760458 Bipolar-based active pixel sensor cell with poly contact and increased capacitive coupling to the base region Albert Bergemont 1998-06-02
5761126 Single-poly EPROM cell that utilizes a reduced programming voltage to program the cell Chih Sieh Teng, Albert Bergemont 1998-06-02
5753954 Single-poly neuron MOS transistor Albert Bergemont 1998-05-19
5734191 Contactless capacitor-coupled bipolar active pixel sensor with integrated electronic shutter Albert Bergemont, Carver A. Mead 1998-03-31
5710446 Active pixel sensor cell that utilizes a parasitic transistor to reset the photodiode of the cell Richard B. Merrill, Albert Bergemont 1998-01-20
5608243 Single split-gate MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range Albert Bergemont 1997-03-04
5594685 Method for programming a single EPROM or flash memory cell to store multiple bits of data that utilizes a punchthrough current Albert Bergemont 1997-01-14
5587596 Single MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range Albert Bergemont, Hosam Haggag 1996-12-24
5587949 Method for programming an ETOX EPROM or flash memory when cells of the array are formed to store multiple bits of data Albert Bergemont 1996-12-24
5576237 Method of manufacturing a capacitor coupled contactless imager with high resolution and wide dynamic range Albert Bergemont, Carver A. Mead, Hosam Haggag 1996-11-19
5566044 Base capacitor coupled photosensor with emitter tunnel oxide for very wide dynamic range in a contactless imaging array Albert Bergemont, Carver A. Mead, Hosam Haggag 1996-10-15
5557567 Method for programming an AMG EPROM or flash memory when cells of the array are formed to store multiple bits of data Albert Bergemont 1996-09-17
5552619 Capacitor coupled contactless imager with high resolution and wide dynamic range Albert Bergemont, Carver A. Mead, Hosam Haggag 1996-09-03
5511021 Method for programming a single EPROM or flash memory cell to store multiple levels of data that utilizes a forward-biased source-to-substrate junction Albert Bergemont 1996-04-23
5477485 Method for programming a single EPROM or FLASH memory cell to store multiple levels of data that utilizes a floating substrate Albert Bergemont 1995-12-19