Issued Patents All Time
Showing 126–150 of 171 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5561623 | High speed DRAM with novel wiring structure | — | 1996-10-01 |
| 5561314 | Manufacture of semiconductor device with field oxide | Masaya Katayama | 1996-10-01 |
| 5554556 | Method of making a semiconductor memory device having an increased capacitance of memory cell | — | 1996-09-10 |
| 5550395 | Semiconductor device and process of producing same | Toshimi Ikeda | 1996-08-27 |
| 5539224 | Semiconductor device having unit circuit-blocks in a common chip as a first layer with electrical interconnections therebetween provided exclusively in a second, upper, interconnection layer formed on the first layer | — | 1996-07-23 |
| 5525534 | Method of producing a semiconductor device using a reticle having a polygonal shaped hole | Shinichiro Ikemasu, Masaya Katayama | 1996-06-11 |
| 5521859 | Semiconductor memory device having thin film transistor and method of producing the same | Kazuo Itabashi | 1996-05-28 |
| 5516715 | Method of producing static random access memory device having thin film transister loads | Kazuo Itabashi | 1996-05-14 |
| 5514615 | Method of producing a semiconductor memory device having thin film transistor load | Kazuo Itabashi | 1996-05-07 |
| 5496758 | Fabrication process of a semiconductor memory device having a multiple well structure in a recessed substrate | — | 1996-03-05 |
| 5453397 | Manufacture of semiconductor device with field oxide | Masaya Katayama | 1995-09-26 |
| 5438008 | Method of making a semiconductor device having two transistors forming a memory cell and a peripheral circuit, wherein the impurity region of the first transistor is not subjected to an etching atmosphere | — | 1995-08-01 |
| 5424237 | Method of producing semiconductor device having a side wall film | — | 1995-06-13 |
| 5414636 | Semiconductor memory device having a memory cell capacitor and a fabrication process thereof | — | 1995-05-09 |
| 5405798 | Method of producing a dynamic random access memory device having improved contact hole structures | — | 1995-04-11 |
| 5396451 | DRAM device having cells staggered along adjacent rows and sources and drains aligned in a column direction | — | 1995-03-07 |
| 5391894 | Static random access memory device having thin film transistor loads | Kazuo Itabashi | 1995-02-21 |
| 5327003 | Semiconductor static RAM having thin film transistor gate connection | Kazuo Itabashi | 1994-07-05 |
| 5325327 | Non-volatile memory, semiconductor memory device having the non-volatile memory | — | 1994-06-28 |
| 5323046 | Semiconductor device and method for producing semiconductor device | Kazuo Itabashi | 1994-06-21 |
| 5286998 | Semiconductor device having two transistors forming a memory cell and a peripheral circuit, wherein the impurity region of the first transistor is not subjected to an etching atmosphere | — | 1994-02-15 |
| 5274599 | Flash-type nonvolatile semiconductor memory having precise erasing levels | — | 1993-12-28 |
| 5247197 | Dynamic random access memory device having improved contact hole structures | — | 1993-09-21 |
| 5214304 | Semiconductor device | Kazunari Shirai | 1993-05-25 |
| 5175128 | Process for fabricating an integrated circuit by a repetition of exposure of a semiconductor pattern | Hisatsugu Shirai, Katsuyoshi Kobayashi, Masao Taguchi | 1992-12-29 |