Issued Patents All Time
Showing 151–171 of 171 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5148246 | Cell array of a non-volatile semiconductor memory devices | — | 1992-09-15 |
| 5138575 | Electricaly erasable and programmable read only memory with a discharge device | Masahiro Nakahara | 1992-08-11 |
| 5128273 | Method of making a dynamic random access memory cell with stacked capacitor | — | 1992-07-07 |
| 5121175 | Semiconductor device having a side wall film | — | 1992-06-09 |
| 5071783 | Method of producing a dynamic random access memory device | Masao Taguchi | 1991-12-10 |
| 5072425 | Semiconductor memory device for decreasing occupancy area by providing sense amplifier driving lines over sense amplifiers and memory cells | Tohru Kohno | 1991-12-10 |
| 5025294 | Metal insulator semiconductor type dynamic random access memory device | — | 1991-06-18 |
| 5021357 | Method of making a dram cell with stacked capacitor | Masao Taguchi | 1991-06-04 |
| 5014104 | Semiconductor integrated circuit having CMOS inverters | — | 1991-05-07 |
| 5014103 | Dynamic random access memory having improved layout and method of arranging memory cell pattern of the dynamic random access memory | — | 1991-05-07 |
| 5012443 | Semiconductor static ram including load resistors formed on different layers | — | 1991-04-30 |
| 4977102 | Method of producing layer structure of a memory cell for a dynamic random access memory device | — | 1990-12-11 |
| 4975753 | Semiconductor memory device having an aluminum-based metallization film and a refractory metal silicide-based metallization film | — | 1990-12-04 |
| 4974040 | Dynamic random access memory device and method of producing same | Masao Taguchi | 1990-11-27 |
| 4961165 | Semiconductor memory device having a charge barrier layer for preventing soft error | — | 1990-10-02 |
| 4953126 | Dynamic random access memory device including a stack capacitor | — | 1990-08-28 |
| 4931845 | Semiconductor memory device having an ohmic contact between an aluminum-silicon alloy metallization film and a silicon substrate | — | 1990-06-05 |
| 4910566 | Layer structure of a memory cell for a dynamic random access memory device and method for producing the same | — | 1990-03-20 |
| 4905064 | Semiconductor memory device having stacked-capacitor type memory cells | Takashi Yabu | 1990-02-27 |
| 4807017 | Semiconductor memory device with wirings having ensured cross-sections | Takashi Yabu | 1989-02-21 |
| 4737471 | Method for fabricating an insulated-gate FET having a narrow channel width | Takehide Shirato | 1988-04-12 |