TE

Taiji Ema

Fujitsu Limited: 104 patents #33 of 24,456Top 1%
FL Fujitsu Semiconductor Limited: 44 patents #3 of 1,301Top 1%
FL Fujitsu Microelectronics Limited: 8 patents #3 of 624Top 1%
UC United Semiconductor Japan Co.: 6 patents #2 of 19Top 15%
ML Mie Fujitsu Semiconductor Limited: 6 patents #16 of 49Top 35%
FL Fujitsu Vlsi Limited: 4 patents #19 of 256Top 8%
SU Suvolta: 3 patents #19 of 61Top 35%
EI Electro Scientific Industries: 2 patents #102 of 314Top 35%
MI Mosaid Technologies Incorporated: 1 patents #115 of 170Top 70%
KL Kyushu Fujitsu Electronics Limited: 1 patents #41 of 75Top 55%
📍 Inabe, JP: #1 of 53 inventorsTop 2%
Overall (All Time): #4,740 of 4,157,543Top 1%
171
Patents All Time

Issued Patents All Time

Showing 101–125 of 171 patents

Patent #TitleCo-InventorsDate
6114721 Dynamic random access memory device and method for producing the same 2000-09-05
6093943 Semiconductor device and method of producing the same Shinichiro Ikemasu, Masaya Katayama 2000-07-25
6066871 Semiconductor memory device having a memory cell capacitor and a fabrication process thereof 2000-05-23
6046468 Dynamic random access memory device and method for producing the same 2000-04-04
6026010 Semiconductor memory device with bit line contact areas and storage capacitor contact areas Koichi Hashimoto 2000-02-15
5972757 Method of forming a self aligned through-hole on a diffused layer 1999-10-26
5939743 Semiconductor IC device with transistors of different characteristics 1999-08-17
5907773 Semiconductor device and method of producing the same Shinichiro Ikemasu, Masaya Katayama 1999-05-25
5874756 Semiconductor storage device and method for fabricating the same Tohru Anezaki 1999-02-23
5874332 Semiconductor memory device having a memory cell capacitor and a fabrication process thereof 1999-02-23
5812444 Semiconductor memory device with bit line contact areas and storage capacitor contact areas Koichi Hashimoto 1998-09-22
5789788 Semiconductor device with first and second wells which have opposite conductivity types and a third well region formed on one of the first and second wells Satoru Miyoshi, Tatsumi Tsutsui, Masaya Katayama, Masayoshi Asano, Kenichi Kanazawa 1998-08-04
5780907 Semiconductor device having triple wells Kazuo Itabashi, Shinichiroh Ikemasu, Junichi Mitani, Itsuo Yanagita, Seiichi Suzuki 1998-07-14
5763910 Semiconductor device having a through-hole formed on diffused layer by self-alignment 1998-06-09
5705420 Method of producing a fin-shaped capacitor 1998-01-06
5696013 Method of manufacturing semiconductor device having unit circuit-blocks 1997-12-09
5688712 Process for producing a semiconductor device Toshimi Ikeda 1997-11-18
5661340 Dynamic random access memory having a stacked fin capacitor with reduced fin thickness Masaaki Higashitani, Toshimi Ikeda, Michiari Kawano, Hiroshi Nomura, Masaya Katayama +1 more 1997-08-26
5650647 Dynamic random access memory device and method of producing same Masao Taguchi 1997-07-22
5641979 Semiconductor memory device having electrically erasable programmable read only memory and dynamic random access memory functions and method of writing, reading and erasing information therefor Tatsuya Kajita 1997-06-24
5610854 Semiconductor memory device and fabrication process thereof 1997-03-11
5594267 Semiconductor memory device having thin film transistor and method of producing the same Kazuo Itabashi 1997-01-14
5591659 Process of producing a semiconductor device in which a height difference between a memory cell area and a peripheral area is eliminated Toshimi Ikeda 1997-01-07
5572053 Dynamic random access memory cell having a stacked capacitor 1996-11-05
5570311 SRAM semiconductor device Kazuo Itabashi, Kazuhiro Mizutani 1996-10-29