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GaN transistors with polysilicon layers used for creating additional components |
Jianjun Cao, Robert Beach, Alexander Lidow, Alana Nakata, Guangyuan Zhao +8 more |
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GaN transistors with polysilicon layers used for creating additional components |
Jianjun Cao, Robert Beach, Alexander Lidow, Alana Nakata, Guangyuan Zhao +8 more |
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Integrated circuit with matching threshold voltages and method for making same |
Jianjun Cao, Robert Beach, Alexander Lidow, Alana Nakata, Robert Strittmatter +7 more |
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GaN device with reduced output capacitance and process for making same |
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Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits |
Chunhua Zhou, Jianjun Cao, Alexander Lidow, Robert Beach, Alana Nakata +6 more |
2015-12-15 |
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Integrated circuit with matching threshold voltages and method for making same |
Jianjun Cao, Robert Beach, Alexander Lidow, Alana Nakata, Robert Strittmatter +7 more |
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GaN transistors with polysilicon layers for creating additional components |
Jianjun Cao, Robert Beach, Alexander Lidow, Alana Nakata, Guangyuan Zhao +8 more |
2015-12-15 |
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Isolation structure in gallium nitride devices and integrated circuits |
Chunhua Zhou, Jianjun Cao, Alexander Lidow, Robert Beach, Alana Nakata +6 more |
2015-10-27 |