Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12262550 | Semiconductor structure and manufacturing method thereof | Ching-Wen Wang, Jie Li, Ming-Wei Tsai | 2025-03-25 |
| 12261046 | Semiconductor structures and manufacturing methods thereof | Jie Li, Ming-Wei Tsai, Ching-Wen Wang | 2025-03-25 |
| 12218191 | Semiconductor structure and manufacturing method thereof | Ching-Wen Wang, Jie Li, Ming-Wei Tsai | 2025-02-04 |
| 12126336 | Gate drive apparatus and control method | Ta-Chuan Kuo, Ke-Horng Chen | 2024-10-22 |
| 11876511 | Gate drive apparatus control method | Ta-Chuan Kuo, Ke-Horng Chen | 2024-01-16 |
| 11749750 | Split-gate trench MOSFET | Tsung-Wei Pai, Yun-Pu Ku | 2023-09-05 |
| 11456379 | Split-gate trench MOSFET | Tsung-Wei Pai, Yun-Pu Ku | 2022-09-27 |
| 11335803 | Source-down transistor with vertical field plate | Che-Yung Lin | 2022-05-17 |
| 11251152 | Thinned semiconductor chip with edge support | Duane Thomas Wilcoxen, Rain Liu, Thomas R. L. Tsai, Will Zhang | 2022-02-15 |
| 11101796 | Gate drive apparatus and control method | TaChuan Kuo, Ke-Horng Chen | 2021-08-24 |
| 10170572 | Self-aligned dual trench device | Yun-Pu Ku, Cheng-Chin Huang | 2019-01-01 |
| 9786753 | Self-aligned dual trench device | Yun-Pu Ku, Cheng-Chin Huang | 2017-10-10 |
| 8912621 | Trench schottky devices | Kai-Yu Chen, Cheng-Chin Huang | 2014-12-16 |
| 8907325 | Thin film transistor having highly dielectric organic layer | Fang-Chung Chen, Han-Ping Shieh | 2014-12-09 |
| 8766279 | SiC-based trench-type schottky device | Cheng-Tyng Yen, Young-Shying Chen, Chien-Chung Hung, Chwan-Ying Lee, Kai-Yu Chen +1 more | 2014-07-01 |
| 8368140 | Trench MOS device with Schottky diode and method for manufacturing same | — | 2013-02-05 |
| 8314471 | Trench devices having improved breakdown voltages and method for manufacturing same | Tony Huang | 2012-11-20 |
| 7265024 | DMOS device having a trenched bus structure | Hsin-Huang Hsieh, Chien-Ping Chang, Mao-Song Tseng | 2007-09-04 |
| 7087958 | Termination structure of DMOS device | Chien-Ping Chang, Mao-Song Tseng, Hsing-Huang Hsieh | 2006-08-08 |
| 7084457 | DMOS device having a trenched bus structure | Hsin-Huang Hsieh, Chien-Ping Chang, Mao-Song Tseng | 2006-08-01 |
| 6998315 | Termination structure for trench DMOS device and method of making the same | Hsin-Huang Hsieh, Su-Wen Chang, Mao-Song Tseng | 2006-02-14 |
| 6989306 | Termination structure of DMOS device and method of forming the same | Hsin-Huang Hsieh, Mao-Song Tseng, Chien-Ping Chang | 2006-01-24 |
| 6855986 | Termination structure for trench DMOS device and method of making the same | Hsin-Huang Hsieh, Su-Wen Chang, Mao-Song Tseng | 2005-02-15 |
| 6821913 | Method for forming dual oxide layers at bottom of trench | Chien-Ping Chang, Mao-Song Tseng, Cheng-Tsung Ni | 2004-11-23 |
| 6677223 | Transistor with highly uniform threshold voltage | Chien-Ping Chang, Mao-Song Tseng, Hsin-Huang Hsieh | 2004-01-13 |