Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9748508 | Organic light emitting diode and display panel using the same | Yu-Hao Lee, Wen-Jang Lin, Chien-Hsun Huang, Shun Wang | 2017-08-29 |
| 9153675 | Power semiconductor and manufacturing method thereof | Chien-Chung Chu, I-Hsien Tang, Chon-Shin Jou, Mao-Song Tseng, Shin-Chi Lai | 2015-10-06 |
| 8859392 | Manufacturing method of power semiconductor | — | 2014-10-14 |
| 7615442 | Method for fabricating trench metal-oxide-semiconductor field effect transistor | Hsin-Huang Hsieh, Mao-Song Tseng | 2009-11-10 |
| 7402522 | Hard mask structure for deep trenched super-junction device | Hsing-Huang Hsieh, Mao-Song Tseng | 2008-07-22 |
| 7271048 | Method for manufacturing trench MOSFET | Mao-Song Tseng, Hsin-Huang Hsieh, Tien-Min Yuan | 2007-09-18 |
| 7265024 | DMOS device having a trenched bus structure | Hsin-Huang Hsieh, Chiao-Shun Chuang, Mao-Song Tseng | 2007-09-04 |
| 7205196 | Manufacturing process and structure of integrated circuit | Hsin-Huang Hsieh, Mao-Song Tseng, Tien-Min Yuan | 2007-04-17 |
| 7087958 | Termination structure of DMOS device | Chiao-Shun Chuang, Mao-Song Tseng, Hsing-Huang Hsieh | 2006-08-08 |
| 7084457 | DMOS device having a trenched bus structure | Hsin-Huang Hsieh, Chiao-Shun Chuang, Mao-Song Tseng | 2006-08-01 |
| 6989306 | Termination structure of DMOS device and method of forming the same | Chiao-Shun Chuang, Hsin-Huang Hsieh, Mao-Song Tseng | 2006-01-24 |
| 6821913 | Method for forming dual oxide layers at bottom of trench | Chiao-Shun Chuang, Mao-Song Tseng, Cheng-Tsung Ni | 2004-11-23 |
| 6677223 | Transistor with highly uniform threshold voltage | Chiao-Shun Chuang, Mao-Song Tseng, Hsin-Huang Hsieh | 2004-01-13 |
| 6660592 | Fabricating a DMOS transistor | Chiao-Shun Chuang, Mao-Song Tseng, Cheng-Tsung Ni | 2003-12-09 |