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David T. Emerson

CR Cree: 119 patents #9 of 639Top 2%
KB Know Bio: 14 patents #1 of 19Top 6%
CR Creeled: 4 patents #21 of 96Top 25%
CL Cree Hong Kong Limited: 1 patents #12 of 17Top 75%
CL Cree Huizhou Opto Limited: 1 patents #8 of 16Top 50%
📍 Durham, NC: #8 of 4,103 inventorsTop 1%
🗺 North Carolina: #64 of 45,564 inventorsTop 1%
Overall (All Time): #6,649 of 4,157,543Top 1%
145
Patents All Time

Issued Patents All Time

Showing 126–145 of 145 patents

Patent #TitleCo-InventorsDate
7557380 Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads Kevin Haberern, Michael John Bergmann, Van Mieczkowski 2009-07-07
D593968 LED chip John Edmond, James Ibbetson, Michael John Bergmann, Amber Christine Salter, Ashay Chitnis +2 more 2009-06-09
D583338 LED chip John Edmond, James Ibbetson, Michael John Bergmann, Amber Christine Salter, Ashay Chitnis +2 more 2008-12-23
D582866 LED chip John Edmond, James Ibbetson, Michael John Bergmann, Amber Christine Salter, Ashay Chitnis +2 more 2008-12-16
7446345 Light emitting devices with active layers that extend into opened pits Michael John Bergmann 2008-11-04
7368368 Multi-chamber MOCVD growth apparatus for high performance/high throughput 2008-05-06
D566056 LED chip John Edmond, James Ibbetson, Michael John Bergmann, Amber Christine Salter, Kevin Haberern 2008-04-08
D566057 LED chip John Edmond, James Ibbetson, Michael John Bergmann, Amber Christine Salter, Kevin Haberern 2008-04-08
7329569 Methods of forming semiconductor devices including mesa structures and multiple passivation layers Kevin Haberern, Raymond Rosado, Michael Bergman 2008-02-12
7312474 Group III nitride based superlattice structures James Ibbetson, Michael John Bergmann, Kathleen Marie Doverspike, Michael O'Loughlin, Howard Nordby +1 more 2007-12-25
7160747 Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers Kevin Haberern, Raymond Rosado, Michael Bergman 2007-01-09
6958497 Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures James Ibbetson, Michael John Bergmann, Kathleen Marie Doverspike, Michael O'Loughlin, Howard Nordby +1 more 2005-10-25
6955977 Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures Hua-Shuang Kong, John Edmond, Kevin Haberern 2005-10-18
6906352 Group III nitride LED with undoped cladding layer and multiple quantum well John Edmond, Kathleen Marie Doverspike, Hua-Shuang Kong, Michael John Bergmann 2005-06-14
6812053 Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures Hua-Shuang Kong, John Edmond, Kevin Haberern 2004-11-02
6803602 Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures Hua-Shuang Kong, John Edmond, Kevin Haberern 2004-10-12
6764932 Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures Hua-Shuang Kong, John Edmond, Kevin Haberern 2004-07-20
6734033 Ultraviolet light emitting diode Amber C. Abare, Michael John Bergmann 2004-05-11
6664560 Ultraviolet light emitting diode Amber C. Abare, Michael John Bergmann 2003-12-16
6582986 Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures Hua-Shuang Kong, John Edmond, Kevin Haberern 2003-06-24