Issued Patents All Time
Showing 26–47 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9518322 | Film formation apparatus and film formation method | Hideki Ito, Kunihiko Suzuki, Isaho Kamata, Masahiko Ito, Hiroaki Fujibayashi +3 more | 2016-12-13 |
| 9496345 | Semiconductor structure, semiconductor device, and method for producing semiconductor structure | Kazutoshi Kojima, Shiyang Ji, Tetsuya Miyazawa, Koji Nakayama, Tetsuro Hemmi +1 more | 2016-11-15 |
| 8815708 | Method for improving the quality of a SiC crystal | Liutauras Storasta | 2014-08-26 |
| 8815711 | Manufacturing apparatus and method for semiconductor device and cleaning method of manufacturing apparatus for semiconductor | Kunihiko Suzuki, Hideki Ito, Isaho Kamata, Masahiko Ito | 2014-08-26 |
| 8716718 | Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate | Kenji Momose, Michiya Odawara, Keiichi Matsuzawa, Hajime Okumura, Kazutoshi Kojima +2 more | 2014-05-06 |
| 8455269 | Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devices | Toshiyuki Miyanagi, Isaho Kamata, Yoshitaka Sugawara, Koji Nakayama, Ryosuke Ishii | 2013-06-04 |
| 8367510 | Process for producing silicon carbide semiconductor device | Toshiyuki Miyanagi, Isaho Kamata, Masahiro Nagano, Yoshitaka Sugawara, Koji Nakayama +1 more | 2013-02-05 |
| 8293623 | Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate | Kenji Momose, Michiya Odawara, Keiichi Matsuzawa, Hajime Okumura, Kazutoshi Kojima +2 more | 2012-10-23 |
| 8178940 | Schottky barrier diode and method for using the same | Tomonori Nakamura, Toshiyuki Miyanagi | 2012-05-15 |
| 8178949 | Bipolar semiconductor device, method for producing the same, and method for controlling Zener voltage | Ryosuke Ishii, Koji Nakayama, Yoshitaka Sugawara | 2012-05-15 |
| 8154026 | Silicon carbide bipolar semiconductor device | Ryosuke Ishii, Koji Nakayama, Yoshitaka Sugawara, Toshiyuki Miyanagi, Isaho Kamata +1 more | 2012-04-10 |
| 8093599 | Silicon carbide Zener diode | Ryosuke Ishii, Koji Nakayama, Yoshitaka Sugawara | 2012-01-10 |
| 7960257 | Silicon carbide semiconductor device and manufacturing method therefor | Koji Nakayama, Yoshitaka Sugawara, Katsunori Asano, Isaho Kamata, Toshiyuki Miyanagi +1 more | 2011-06-14 |
| 7960737 | Silicon carbide semiconductor device and manufacturing method therefor | Koji Nakayama, Yoshitaka Sugawara, Katsunori Asano, Isaho Kamata, Toshiyuki Miyanagi +1 more | 2011-06-14 |
| 7960738 | Silicon carbide semiconductor device and manufacturing method therefor | Koji Nakayama, Yoshitaka Sugawara, Katsunori Asano, Isaho Kamata, Toshiyuki Miyanagi +1 more | 2011-06-14 |
| 7902054 | Schottky barrier semiconductor device and method for manufacturing the same | Tomonori Nakamura, Toshiyuki Miyanagi | 2011-03-08 |
| 7834362 | SiC crystal semiconductor device | Liutauras Storasta | 2010-11-16 |
| 7768017 | Silicon carbide semiconductor device and manufacturing method therefor | Koji Nakayama, Yoshitaka Sugawara, Katsunori Asano, Isaho Kamata, Toshiyuki Miyanagi +1 more | 2010-08-03 |
| 7754589 | Method for improving the quality of a SiC crystal | Liutauras Storasta | 2010-07-13 |
| 7737011 | Method for improving the quality of an SiC crystal and an SiC semiconductor device | Liutauras Storasta | 2010-06-15 |
| 7507650 | Process for producing Schottky junction type semiconductor device | Tomonori Nakamura, Toshiyuki Miyanagi | 2009-03-24 |
| 7081420 | Method for preparing SiC crystal and SiC crystal | Isaho Kamata | 2006-07-25 |