TK

Toru Koizumi

Canon: 187 patents #13 of 19,416Top 1%
HI Hitachi: 3 patents #10,712 of 28,497Top 40%
DI Daikin Industries: 1 patents #1,764 of 2,957Top 60%
JA Japan Science And Technology Agency: 1 patents #756 of 2,171Top 35%
TT The University Of Tokyo: 1 patents #1,000 of 2,633Top 40%
Overall (All Time): #3,598 of 4,157,543Top 1%
194
Patents All Time

Issued Patents All Time

Showing 176–194 of 194 patents

Patent #TitleCo-InventorsDate
5952694 Semiconductor device made using processing from both sides of a workpiece Mamoru Miyawaki, Yasushi Kawasumi, Shunsuke Inoue, Yutaka Akino, Tetsunobu Kohchi 1999-09-14
5827755 Liquid crystal image display unit and method for fabricating semiconductor optical member Takao Yonehara, Mamoru Miyawaki, Akira Ishizaki, Junichi Hoshi, Masaru Sakamoto +5 more 1998-10-27
5801581 Comparison detection circuit 1998-09-01
5789790 Semiconductor device Masakazu Morishita, Shigetoshi Sugawa 1998-08-04
5698892 Image pickup element and image pickup device having scribe lines composed of two portions with different layer structure Yoshio Koide 1997-12-16
5661329 Semiconductor integrated circuit device including an improved separating groove arrangement Toshiro Hiramoto, Nobuo Tamba, Masami Usami, Takahide Ikeda, Kazuo Tanaka +3 more 1997-08-26
5616944 Diode and semiconductor device having a controlled intrinsic or low impurity concentration region between opposite conductivity type semiconductor regions Hidemasa Mizutani 1997-04-01
5572044 Monocrystalline semiconductor commutator with grain boundry Hidemasa Mizutani 1996-11-05
5571747 Method for producing a semiconductor commutator Hidemasa Mizutani 1996-11-05
5530266 Liquid crystal image display unit and method for fabricating semiconductor optical member Takao Yonehara, Mamoru Miyawaki, Akira Ishizaki, Junichi Hoshi, Masaru Sakamoto +5 more 1996-06-25
5508550 Semiconductor device including a lateral-type transistor Masakazu Morishita, Shigetoshi Sugawa 1996-04-16
5475244 MIS transistor having second conductivity type source and drain regions sandwiching a channel region of a first conductivity type of a first semiconductor material formed on an insulating substrate, and a gate electrode formed on a main surface Hidemasa Mizutani, Masakazu Morishita 1995-12-12
5451798 Semiconductor device and its fabrication method Hisanori Tsuda, Hidenori Watanabe 1995-09-19
5412240 Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness Shunsuke Inoue, Mamoru Miyawaki, Shigetoshi Sugawa 1995-05-02
5410172 Thin film transistor and preparation thereof Jun Nakayama, Hidemasa Mizutani 1995-04-25
5128740 Semiconductor integrated circuit device with isolation grooves and protruding portions Akihisa Uchida, Katsumi Ogiue, Keiichi Higeta 1992-07-07
5034782 Semiconductor commutator with grain boundary Hidemasa Mizutani 1991-07-23
4949162 Semiconductor integrated circuit with dummy pedestals Yoichi Tamaki, Kiyoji Ikeda, Toru Nakamura, Akihisa Uchida, Hiromichi Enami +4 more 1990-08-14
4713469 Fluorine-containing multifunctional ester compound Yoshio Takeuchi, Kozo Hori 1987-12-15