Issued Patents All Time
Showing 101–110 of 110 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4920387 | Light emitting device | Katsuji Takasu, Hisanori Tsuda, Yutaka Hirai | 1990-04-24 |
| 4916510 | Thin film mesa transistor of field effect type with superlattice | Katsuji Takasu, Hisanori Tsuda, Yutaka Hirai | 1990-04-10 |
| 4914490 | Non-single crystal electroluminescent device | Katsuji Takasu, Hisanori Tsuda, Yutaka Hirai | 1990-04-03 |
| 4906543 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material | Tatsuyuki Aoike, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino | 1990-03-06 |
| 4906542 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material | Tatsuyuki Aoike, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino | 1990-03-06 |
| 4893154 | Electroluminescent device | Yutaka Hirai, Hisanori Tsuda, Katsuji Takasu | 1990-01-09 |
| 4886723 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material | Tatsuyuki Aoike, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino | 1989-12-12 |
| 4882251 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material | Tatsuyuki Aoike, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino | 1989-11-21 |
| 4645684 | Method for forming deposited film | Yoshiyuki Osada, Hisanori Tsuda, Satoshi Omata, Katsuji Takasu, Yutaka Hirai | 1987-02-24 |
| 4626449 | Method for forming deposition film | Yutaka Hirai, Hiroshi Echizen, Hisanori Tsuda, Katsuji Takasu | 1986-12-02 |