Issued Patents All Time
Showing 101–125 of 152 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5008726 | PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % | Shunichi Ishihara, Masahiro Kanai, Tsutomu Murakami, Kozo Arao, Yasushi Fujioka +1 more | 1991-04-16 |
| 4982251 | Semiconductor element | Toshiyuki Komatsu, Yutaka Hirai, Yoshiyuki Osada, Satoshi Omata, Takashi Nakagiri | 1991-01-01 |
| 4965570 | Photoelectric conversion apparatus | Katsunori Hatanaka, Shunichi Uzawa, Toshiyuki Komatsu | 1990-10-23 |
| 4963955 | Photoelectric conversion apparatus | Katsunori Hatanaka, Masaki Fukaya, Soichiro Kawakami | 1990-10-16 |
| 4959106 | Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % | Masahiro Kanai, Shunichi Ishihara, Kozo Arao, Yasushi Fujioka, Akira Sakai +1 more | 1990-09-25 |
| 4946514 | Thin film photoelectromotive force element having multi-thin films stacked semiconductor layer | Isamu Shimizu | 1990-08-07 |
| 4931661 | Photoelectric conversion device having a common semiconductor layer for a portion of the photoelectric conversion element and a portion of the transfer transistor section | Masaki Fukaya, Soichiro Kawakami, Satoshi Itabashi, Katsunori Terada, Ihachiro Gofuku +6 more | 1990-06-05 |
| 4926229 | Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material | Shunichi Ishihara, Masahiro Kanai, Kozo Arao, Yasushi Fujioka, Akira Sakai | 1990-05-15 |
| 4926058 | Image reading apparatus with block lighting and pulsing | Hirofumi Iwamoto, Tatsundo Kawai, Makoto Ogura, Shinichi Seitoh, Noriyuki Kaifu | 1990-05-15 |
| 4916326 | Long array photoelectric converting apparatus with reduced crosstalk | Katsunori Hatanaka, Yoshinori Isobe, Toshihiro Saika | 1990-04-10 |
| 4905072 | Semiconductor element | Toshiyuki Komatsu, Yutaka Hirai, Yoshiyuki Osada, Satoshi Omata, Takashi Nakagiri | 1990-02-27 |
| 4900694 | Process for the preparation of a multi-layer stacked junction typed thin film transistor using seperate remote plasma | — | 1990-02-13 |
| 4888062 | Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % | Masahiro Kanai, Shunichi Ishihara, Kozo Arao, Yasushi Fujioka, Akira Sakai +1 more | 1989-12-19 |
| 4886962 | Method for driving a photo-sensor by applying a pulse voltage to an auxiliary electrode during a non-read time | Ihachiro Gofuku, Yoshiyuki Osada | 1989-12-12 |
| 4886977 | Photoelectric converter provided with voltage dividing means | Ihachiro Gofuku, Yoshiyuki Osada, Katsunori Hatanaka, Toshihiro Saika, Noriyuki Kaifu | 1989-12-12 |
| 4851302 | Functional ZnSe:H deposited films | Shunichi Ishihara, Kozo Arao, Yasushi Fujioka, Akira Sakai, Masahiro Kanai | 1989-07-25 |
| 4845355 | Photoconductive type sensor and its driving method and apparatus | Soichiro Kawakami, Ihachiro Gofuku, Katsunori Hatanaka, Masaki Fukaya, Toshiyuki Komatsu | 1989-07-04 |
| 4830946 | CVD process for forming an image forming member for electrophotography | Toshiyuki Komatsu, Yutaka Hirai, Tadaji Fukuda | 1989-05-16 |
| 4827345 | Image readout apparatus | Toshiyuki Komatsu, Shinichi Seitoh, Katsunori Hatanaka | 1989-05-02 |
| 4818656 | Image forming member for electrophotography | Tadaji Fukuda, Yutaka Hirai, Toshiyuki Komatsu | 1989-04-04 |
| 4814842 | Thin film transistor utilizing hydrogenated polycrystalline silicon | Toshiyuki Komatsu, Yutaka Hirai, Satoshi Omata, Yoshiyuki Osada, Takashi Nakagiri | 1989-03-21 |
| 4788445 | Long array photoelectric converting apparatus with insulated matrix wiring | Katsunori Hatanaka, Yoshinori Isobe, Toshihiro Saika | 1988-11-29 |
| 4772957 | Photoelectric conversion apparatus | Hideo Kanno, Yasuo Kuroda, Katsunori Hatanaka | 1988-09-20 |
| 4770045 | Pressure sensor | Takeshi Nakane | 1988-09-13 |
| 4766477 | Semiconductor device including a semiconductor layer having a polycrystalline silicon film with selected atomic constituency | Toshiyuki Komatsu, Yoshiyuki Osada, Satoshi Omata, Yutaka Hirai, Takashi Nakagiri | 1988-08-23 |