Issued Patents All Time
Showing 26–43 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4914502 | Laterally marching interconnecting lines in semiconductor intergrated circuits | Joseph Lebowitz | 1990-04-03 |
| 4896108 | Test circuit for measuring specific contact resistivity of self-aligned contacts in integrated circuits | Kwok Ng | 1990-01-23 |
| 4824796 | Process for manufacturing semiconductor BICMOS device | Tzu-Yin Chiu, Gen M. Chin, Ronald C. Hanson, Maureen Y. Lau, Kwing F. Lee +4 more | 1989-04-25 |
| 4825278 | Radiation hardened semiconductor devices | Steven J. Hillenius, Lalita Manchanda | 1989-04-25 |
| 4822754 | Fabrication of FETs with source and drain contacts aligned with the gate electrode | Frederick Vratny | 1989-04-18 |
| 4794091 | Method of making high-performance dram arrays including trench capacitors | — | 1988-12-27 |
| 4766090 | Methods for fabricating latchup-preventing CMOS device | Gerald A. Coquin, Louis C. Parrillo | 1988-08-23 |
| 4694561 | Method of making high-performance trench capacitors for DRAM cells | Joseph Lebowitz | 1987-09-22 |
| 4665414 | Schottky-barrier MOS devices | Conrad J. Koeneke, Martin P. Lepselter | 1987-05-12 |
| 4656730 | Method for fabricating CMOS devices | Louis C. Parrillo | 1987-04-14 |
| 4647957 | Latchup-preventing CMOS device | Gerald A. Coquin, Louis C. Parrillo | 1987-03-03 |
| 4646123 | Latchup-preventing CMOS device | Louis C. Parrillo | 1987-02-24 |
| 4643804 | Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices | Thomas E. Seidel | 1987-02-17 |
| 4514893 | Fabrication of FETs | Eliezer Kinsbron, Thomas E. Smith | 1985-05-07 |
| 4485550 | Fabrication of schottky-barrier MOS FETs | Conrad J. Koeneke, Martin P. Lepselter | 1984-12-04 |
| 4471524 | Method for manufacturing an insulated gate field effect transistor device | Eliezer Kinsbron | 1984-09-18 |
| 4453306 | Fabrication of FETs | Frederick Vratny | 1984-06-12 |
| 4432132 | Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features | Eliezer Kinsbron | 1984-02-21 |