Issued Patents All Time
Showing 51–71 of 71 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9887264 | Nanowire field effect transistor (FET) and method for fabricating the same | Jack O. Chu, Isaac Lauer, Kuen-Ting Shiu, Jeng-Bang Yau | 2018-02-06 |
| 9882068 | Monolithic integration techniques for fabricating photodetectors with transistors on same substrate | Shu-Lu Chen | 2018-01-30 |
| 9799689 | Light absorption apparatus | Shu-Lu Chen | 2017-10-24 |
| 9786715 | High efficiency wide spectrum sensor | Yun-Chung Na, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen | 2017-10-10 |
| 9748307 | Light absorption apparatus | Han-Din Liu, Shu-Lu Chen | 2017-08-29 |
| 9704916 | Multi-wafer based light absorption apparatus and applications thereof | Han-Din Liu, Shu-Lu Chen, Yun-Chung Na, Hui-Wen Chen | 2017-07-11 |
| 9640421 | Monolithic integration techniques for fabricating photodetectors with transistors on same substrate | Shu-Lu Chen | 2017-05-02 |
| 9589791 | Compound finFET device including oxidized III-V fin isolator | Isaac Lauer, Kuen-Ting Shiu, Jeng-Bang Yau | 2017-03-07 |
| 9558930 | Mixed lithography approach for e-beam and optical exposure using HSQ | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2017-01-31 |
| 9548238 | Method of manufacturing a semiconductor device using a self-aligned OPL replacement contact and patterned HSQ and a semiconductor device formed by same | Jack O. Chu, Isaac Lauer, Jeng-Bang Yau | 2017-01-17 |
| 9548355 | Compound finFET device including oxidized III-V fin isolator | Isaac Lauer, Kuen-Ting Shiu, Jeng-Bang Yau | 2017-01-17 |
| 9524898 | Monolithic integration techniques for fabricating photodetectors with transistors on same substrate | Shu-Lu Chen | 2016-12-20 |
| 9508640 | Multiple via structure and method | Cheng-Wei Cheng, Keith E. Fogel, Edward W. Kiewra, Amlan Majumdar, Devendra K. Sadana +2 more | 2016-11-29 |
| 9431301 | Nanowire field effect transistor (FET) and method for fabricating the same | Jack O. Chu, Isaac Lauer, Kuen-Ting Shiu, Jeng-Bang Yau | 2016-08-30 |
| 9385122 | Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same | Jack O. Chu, Isaac Lauer, Jeng-Bang Yau | 2016-07-05 |
| 9240326 | Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact | Jack O. Chu, Isaac Lauer, Jeng-Bang Yau | 2016-01-19 |
| 9184290 | Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer | Jack O. Chu, Isaac Lauer, Jeng-Bang Yau | 2015-11-10 |
| 9177956 | Field effect transistor (FET) with self-aligned contacts, integrated circuit (IC) chip and method of manufacture | Jack O. Chu, Isaac Lauer, Jeng-Bang Yau | 2015-11-03 |
| 9059095 | Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact | Jack O. Chu, Isaac Lauer, Jeng-Bang Yau | 2015-06-16 |
| 9059205 | Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same | Jack O. Chu, Isaac Lauer, Jeng-Bang Yau | 2015-06-16 |
| 8071458 | Method for forming an interfacial passivation layer on the Ge semiconductor | Po-Tsun Liu, Chen-Shuo Huang, Yi-Ling Huang, Simon M. Sze, Yoshio Nishi | 2011-12-06 |