Issued Patents All Time
Showing 26–50 of 57 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10147798 | MIS contact structure with metal oxide conductor | Andreas Goebel | 2018-12-04 |
| 10084091 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | R. Stockton Gaines | 2018-09-25 |
| 10008827 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Andreas Goebel, R. Stockton Gaines | 2018-06-26 |
| 9755038 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Andreas Goebel, R. Stockton Gaines | 2017-09-05 |
| 9673327 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | R Stockton Gaines | 2017-06-06 |
| 9620611 | MIS contact structure with metal oxide conductor | Andreas Goebel | 2017-04-11 |
| 9484426 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Andreas Goebel, R. Stockton Gaines | 2016-11-01 |
| 9406798 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | R. Stockton Gaines | 2016-08-02 |
| 9362376 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Andreas Goebel, R. Stockton Gaines | 2016-06-07 |
| 9270083 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Andreas Goebel, R. Stockton Gaines | 2016-02-23 |
| 9059201 | Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation | — | 2015-06-16 |
| 9036672 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Andreas Goebel, R. Stockton Gaines | 2015-05-19 |
| 9029686 | Strain-enhanced silicon photon-to-electron conversion devices | — | 2015-05-12 |
| 8731017 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Andreas Goebel, R. Stockton Gaines | 2014-05-20 |
| 8658523 | Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) | Carl M. Faulkner, Daniel J. Connelly, Daniel E. Grupp | 2014-02-25 |
| 8450133 | Strained-enhanced silicon photon-to-electron conversion devices | — | 2013-05-28 |
| 8395213 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | R. Stockton Gaines | 2013-03-12 |
| 8361867 | Biaxial strained field effect transistor devices | — | 2013-01-29 |
| 8361868 | Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation | — | 2013-01-29 |
| 8263466 | Channel strain induced by strained metal in FET source or drain | Daniel J. Connelly | 2012-09-11 |
| 8263467 | Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor | Daniel E. Grupp, Daniel J. Connelly, Carl M. Faulkner | 2012-09-11 |
| 8212336 | Field effect transistor source or drain with a multi-facet surface | Andreas Goebel, Daniel J. Connelly, Vaishali Ukirde | 2012-07-03 |
| 8003486 | Method of making a semiconductor device having a strained semiconductor active region using edge relaxation, a buried stressor layer and a sacrificial stressor layer | R. Stockton Gaines, Daniel J. Connelly | 2011-08-23 |
| 7977147 | Strained silicon with elastic edge relaxation | — | 2011-07-12 |
| 7972916 | Method of forming a field effect transistors with a sacrificial stressor layer and strained source and drain regions formed in recesses | Daniel J. Connelly, R. Stockton Gaines | 2011-07-05 |