CF

Carl M. Faulkner

AT Acorn Technologies: 6 patents #8 of 15Top 55%
📍 Belmont, CA: #502 of 1,494 inventorsTop 35%
🗺 California: #93,399 of 386,348 inventorsTop 25%
Overall (All Time): #855,614 of 4,157,543Top 25%
6
Patents All Time

Issued Patents All Time

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
8658523 Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) Daniel J. Connelly, Paul A. Clifton, Daniel E. Grupp 2014-02-25
8263467 Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor Daniel E. Grupp, Daniel J. Connelly, Paul A. Clifton 2012-09-11
7902029 Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor Daniel E. Grupp, Daniel J. Connelly, Paul A. Clifton 2011-03-08
7816240 Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) Daniel J. Connelly, Paul A. Clifton, Daniel E. Grupp 2010-10-19
7382021 Insulated gate field-effect transistor having III-VI source/drain layer(s) Daniel J. Connelly, Daniel E. Grupp 2008-06-03
6891234 Transistor with workfunction-induced charge layer Daniel J. Connelly, Daniel E. Grupp 2005-05-10