Issued Patents All Time
Showing 1–25 of 57 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12402365 | SOI wafers and devices with buried stressors | Andreas Goebel | 2025-08-26 |
| 12336263 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Andreas Goebel, R. Stockton Gaines | 2025-06-17 |
| 12034078 | Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height | Andreas Goebel, Walter A. Harrison | 2024-07-09 |
| 11978800 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | R. Stockton Gaines | 2024-05-07 |
| 11843040 | MIS contact structure with metal oxide conductor | Andreas Goebel | 2023-12-12 |
| 11804533 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Andreas Goebel, R. Stockton Gaines | 2023-10-31 |
| 11791411 | Relating to SOI wafers and devices with buried stressors | Andreas Goebel | 2023-10-17 |
| 11728624 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Andreas Goebel, R. Stockton Gaines | 2023-08-15 |
| 11610974 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Andreas Goebel, R. Stockton Gaines | 2023-03-21 |
| 11476364 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | R. Stockton Gaines | 2022-10-18 |
| 11462643 | Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height | Andreas Goebel, Walter A. Harrison | 2022-10-04 |
| 11322615 | SOI wafers and devices with buried stressor | Andreas Goebel | 2022-05-03 |
| 11271370 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Andreas Goebel, R. Stockton Gaines | 2022-03-08 |
| 10950727 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | R. Stockton Gaines | 2021-03-16 |
| 10879366 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Andreas Goebel, R. Stockton Gaines | 2020-12-29 |
| 10872964 | MIS contact structure with metal oxide conductor | Andreas Goebel | 2020-12-22 |
| 10833199 | Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height | Andreas Goebel, Walter A. Harrison | 2020-11-10 |
| 10833194 | SOI wafers and devices with buried stressor | Andreas Goebel | 2020-11-10 |
| 10727647 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Andreas Goebel, R. Stockton Gaines | 2020-07-28 |
| 10580896 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | R. Stockton Gaines | 2020-03-03 |
| 10553695 | MIS contact structure with metal oxide conductor | Andreas Goebel | 2020-02-04 |
| 10505005 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Andreas Goebel, R. Stockton Gaines | 2019-12-10 |
| 10505047 | Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height | Andreas Goebel, Walter A. Harrison | 2019-12-10 |
| 10193307 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Andreas Goebel, R. Stockton Gaines | 2019-01-29 |
| 10170627 | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height | Andreas Goebel, Walter A. Harrison | 2019-01-01 |