Issued Patents All Time
Showing 1–25 of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12336263 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Paul A. Clifton, Andreas Goebel | 2025-06-17 |
| 11978800 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | Paul A. Clifton | 2024-05-07 |
| 11804533 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Paul A. Clifton, Andreas Goebel | 2023-10-31 |
| 11728624 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Paul A. Clifton, Andreas Goebel | 2023-08-15 |
| 11610974 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Paul A. Clifton, Andreas Goebel | 2023-03-21 |
| 11476364 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | Paul A. Clifton | 2022-10-18 |
| 11271370 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Paul A. Clifton, Andreas Goebel | 2022-03-08 |
| 10950727 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | Paul A. Clifton | 2021-03-16 |
| 10879366 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Paul A. Clifton, Andreas Goebel | 2020-12-29 |
| 10727647 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Paul A. Clifton, Andreas Goebel | 2020-07-28 |
| 10580896 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | Paul A. Clifton | 2020-03-03 |
| 10505005 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Paul A. Clifton, Andreas Goebel | 2019-12-10 |
| 10193307 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Paul A. Clifton, Andreas Goebel | 2019-01-29 |
| 10084091 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | Paul A. Clifton | 2018-09-25 |
| 10008827 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Paul A. Clifton, Andreas Goebel | 2018-06-26 |
| 9755038 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Paul A. Clifton, Andreas Goebel | 2017-09-05 |
| 9484426 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Paul A. Clifton, Andreas Goebel | 2016-11-01 |
| 9406798 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | Paul A. Clifton | 2016-08-02 |
| 9362376 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Walter A. Harrison, Paul A. Clifton, Andreas Goebel | 2016-06-07 |
| 9270083 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Paul A. Clifton, Andreas Goebel | 2016-02-23 |
| 9036672 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Paul A. Clifton, Andreas Goebel | 2015-05-19 |
| 8731017 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Paul A. Clifton, Andreas Goebel | 2014-05-20 |
| 8395213 | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer | Paul A. Clifton | 2013-03-12 |
| 8003486 | Method of making a semiconductor device having a strained semiconductor active region using edge relaxation, a buried stressor layer and a sacrificial stressor layer | Daniel J. Connelly, Paul A. Clifton | 2011-08-23 |
| 7972916 | Method of forming a field effect transistors with a sacrificial stressor layer and strained source and drain regions formed in recesses | Daniel J. Connelly, Paul A. Clifton | 2011-07-05 |