Issued Patents 2025
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426380 | Integrated circuit having angled conductive feature | Ting-Wei Chiang, Chung-Te Lin, Hui-Zhong Zhuang, Li-Chun Tien, Sheng-Hsiung Wang | 2025-09-23 |
| 12423496 | Methods for forming pattern layout, mask, and semiconductor structure | Chun-Yen Lin, Bao-Ru Young | 2025-09-23 |
| 12419102 | Semiconductor devices | Shih-Chieh Wu, Pang-Chi Wu, Kuo-Yi Chao, Mei-Yun Wang, Hsien-Huang Liao +1 more | 2025-09-16 |
| 12402384 | Standard cell design with dummy padding | Sheng-Hsiung Wang, Chun-Yen Lin, Yen-Hung Lin, Yuan-Te Hou | 2025-08-26 |
| 12376338 | Semiconductor device structure with dielectric dummy gate and method for forming the same | Sheng-Hsiung Wang | 2025-07-29 |
| 12375080 | Fuse structure | Tun-Jen Chang, Bao-Ru Young | 2025-07-29 |
| 12353815 | Method for chip integration | Yung Feng Chang, Yu-Jung Chang, Bao-Ru Young | 2025-07-08 |
| 12349446 | Structure and formation method of semiconductor device with epitaxial structures | Tun-Jen Chang, Bao-Ru Young | 2025-07-01 |
| 12336250 | Semiconductor device structure and method for forming the semiconductor device structure | Shao-Jyun Wu, Yung Feng Chang, Bao-Ru Young | 2025-06-17 |
| 12300696 | Semiconductor devices having fins and multiple isolation regions | Chia-Sheng Fan, Bao-Ru Young | 2025-05-13 |
| 12288783 | Integrated standard cell structure | Ming-Yang Huang, Yung Feng Chang, Bao-Ru Young | 2025-04-29 |
| 12288784 | Semiconductor structures having wells with protruding sections for pickup cells | Yung Feng Chang, Chun-Chia Hsu, Bao-Ru Young | 2025-04-29 |
| 12278147 | Semiconductor structure and method for forming the same | Tun-Jen Chang, Bao-Ru Young | 2025-04-15 |
| 12255201 | ESD structure | Chun-Chia Hsu, Yung Feng Chang, Bao-Ru Young, Jam-Wem Lee, Chih-Hung Wang | 2025-03-18 |
| 12199034 | Via rail structure | Hao Kuang, Sheng-Hsiung Wang, Bao-Ru Young, Wang-Jung Hsueh, Pang-Chi Wu | 2025-01-14 |
| 12199087 | Dummy poly layout for high density devices | Yung Feng Chang, Bao-Ru Young, Yu-Jung Chang, Tzung-Chi Lee, Chun-Chia Hsu | 2025-01-14 |