Issued Patents 2025
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432942 | MIM capacitor and method of forming the same | Hai-Dang Trinh, Yao-Wen Chang, Jui-Lin Chu, Cheng-Te Lee | 2025-09-30 |
| 12414484 | RRAM structure | Hai-Dang Trinh, Chii-Ming Wu, Fa-Shen Jiang | 2025-09-09 |
| 12408354 | Method to reduce breakdown failure in a MIM capacitor | Chii-Ming Wu, Chia-Shiung Tsai, Chung-Yi Yu, Rei-Lin Chu | 2025-09-02 |
| 12408567 | Memory device structure with data storage element | Hai-Dang Trinh, Cheng-Yuan Tsai | 2025-09-02 |
| 12364171 | Resistive memory cell with switching layer comprising one or more dopants | Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Hsun-Chung Kuang, Bi-Shen Lee | 2025-07-15 |
| 12356631 | FeRAM with laminated ferroelectric film and method forming same | Bi-Shen Lee, Yi Yang Wei, Hsun-Chung Kuang, Cheng-Yuan Tsai, Hai-Dang Trinh | 2025-07-08 |
| 12336201 | Capacitor structure and method of making the same | Jian-Shiou Huang, Chia-Shiung Tsai, Cheng-Yuan Tsai, Yao-Wen Chang | 2025-06-17 |
| 12295270 | RRAM device with improved performance | Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Bi-Shen Lee | 2025-05-06 |
| 12266604 | Techniques to inhibit delamination from flowable gap-fill dielectric | Chin-Wei Liang, Hsun-Chung Kuang, Ching Ju Yang | 2025-04-01 |
| 12261197 | Diffusion barrier layer in top electrode to increase break down voltage | Chii-Ming Wu, Hai-Dang Trinh, Fa-Shen Jiang | 2025-03-25 |
| 12239035 | Resistive memory cell having a low forming voltage | Hai-Dang Trinh, Chii-Ming Wu, Tzu-Chung Tsai, Fa-Shen Jiang, Bi-Shen Lee | 2025-02-25 |
| 12221337 | Semiconductor MEMS structure | Yuan-Chih Hsieh, Jung-Huei Peng, Yi-Chien Wu | 2025-02-11 |
| 12225834 | Method for forming semiconductor structure | Hai-Dang Trinh, Fa-Shen Jiang | 2025-02-11 |
| 12199029 | MIM capacitor with a symmetrical capacitor insulator structure | Cheng-Te Lee, Rei-Lin Chu, Chii-Ming Wu, Yeur-Luen Tu, Chung-Yi Yu | 2025-01-14 |