Issued Patents 2025
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432942 | MIM capacitor and method of forming the same | Hsing-Lien Lin, Yao-Wen Chang, Jui-Lin Chu, Cheng-Te Lee | 2025-09-30 |
| 12424256 | Circuit design and layout with high embedded memory density | Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2025-09-23 |
| 12414484 | RRAM structure | Chii-Ming Wu, Hsing-Lien Lin, Fa-Shen Jiang | 2025-09-09 |
| 12408448 | Deep trench isolation structure and methods for fabrication thereof | Bi-Shen Lee, Chia-Wei Hu, Min-Ying Tsai, Ching-I Li, Hsun-Chung Kuang +1 more | 2025-09-02 |
| 12408567 | Memory device structure with data storage element | Hsing-Lien Lin, Cheng-Yuan Tsai | 2025-09-02 |
| 12364171 | Resistive memory cell with switching layer comprising one or more dopants | Fa-Shen Jiang, Cheng-Yuan Tsai, Hsing-Lien Lin, Hsun-Chung Kuang, Bi-Shen Lee | 2025-07-15 |
| 12356631 | FeRAM with laminated ferroelectric film and method forming same | Bi-Shen Lee, Yi Yang Wei, Hsing-Lien Lin, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2025-07-08 |
| 12349366 | Interface film to mitigate size effect of memory device | Bi-Shen Lee, Yi Yang Wei, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2025-07-01 |
| 12334317 | Remote plasma ultraviolet enhanced deposition | Hsun-Chung Kuang, Fa-Shen Jiang | 2025-06-17 |
| 12310036 | Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same | Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang | 2025-05-20 |
| 12295270 | RRAM device with improved performance | Fa-Shen Jiang, Cheng-Yuan Tsai, Hsing-Lien Lin, Bi-Shen Lee | 2025-05-06 |
| 12295267 | Semiconductor device and method of manufacturing the same | Bi-Shen Lee, Hsun-Chung Kuang | 2025-05-06 |
| 12261197 | Diffusion barrier layer in top electrode to increase break down voltage | Hsing-Lien Lin, Chii-Ming Wu, Fa-Shen Jiang | 2025-03-25 |
| 12245529 | Diffusion barrier layer in programmable metallization cell | Albert Zhong, Cheng-Yuan Tsai, Shing-Chyang Pan | 2025-03-04 |
| 12239035 | Resistive memory cell having a low forming voltage | Chii-Ming Wu, Hsing-Lien Lin, Tzu-Chung Tsai, Fa-Shen Jiang, Bi-Shen Lee | 2025-02-25 |
| 12232434 | Multi-doped data storage structure configured to improve resistive memory cell performance | Bi-Shen Lee, Fa-Shen Jiang, Hsun-Chung Kuang | 2025-02-18 |
| 12232336 | Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same | Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang | 2025-02-18 |
| 12225834 | Method for forming semiconductor structure | Hsing-Lien Lin, Fa-Shen Jiang | 2025-02-11 |